Lancaster EPP Capital bid 2018

这笔赠款将允许兰开斯特建造一个新设施，允许最先进的半导体设备连接到控制和读出它们所需的电子设备。它还将帮助开发新的红外探测器。倒装芯片键合技术将使设备能够以更有效的方式进行测试，更少的不良键合和损坏的设备，但将允许在更短的时间内进行绑定。它还将首次为英国提供一种双光子吸收方法来测量半导体设备的辐射损伤。世界上只有很少的地方有这样的设施，它将提供一种非常精确的方法，在特定的点和明确定义的深度对设备进行测试。最终，这笔赠款将允许新的集成技术提供高容量的计算机存储和处理，以灵活和稳定的方式支持来自粒子物理和天文学项目的海量数据。这些发展也将为“现实世界”的应用提供信息。

This grant will allow Lancaster to build a new facility that will allow state of the art semiconductor devices to the electronics required to control and read them out. it will also help develop new infrared detectors., The 'flip chip' bonding technique will allow the devices to be tested in a more efficient way, with fewer poor bonds and damaged devices, and yet will allow binding in a shorter time.It will also provide for the UK for the first time a two photon absorption method to measure the radiation damage in semiconductor devices. Only very few places in the world have such a facility, and it will provide a very precise method to test the devices at specific points and at well defined depths into the volume. The precision will allow place the UK at the forefront of sensor development.Finally, the grant will allow new integrated techniques to provide high capacity computer storage and processing to be adapted to support the very large volumes of data coming from particle physics and astronomy projects in a flexible and stable way. These developments will also inform 'real world' applcations.