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2D monolayers enabling next generation III- V devices

2D monolayers enabling next generation III- V devices
2D 单层使下一代 III-V 器件成为可能
批准号:
1944366
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --

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中文摘要
翻译
近年来,掺入金属卤化物钙钛矿的太阳能电池的效率得到了迅速的发展。然而,无论是在钙钛矿内部还是在电子界面上,器件的性能、稳定性和寿命仍然受到未分解的电子和离子过程的限制。这些过程构成了商业化的最后障碍之一。通过设计光电器件中钙钛矿和2D材料之间的界面,该项目旨在研究和克服退化过程和功率损失,以获得具有更高运行稳定性的高性能太阳能电池。
英文摘要
The efficiency of solar cells incorporating metal halide perovskites has developed rapidly over recent years. However, device performance, stability and longevity are still limited by unresolved electronic and ionic processes both within the perovskite and at electronic interfaces. These processes provide one of the final barriers to commercialisation. By engineering the interfaces between perovskites and 2D materials within optoelectronic devices, this project aims to investigate and overcome degradation processes and power losses to achieve high performance solar cells with improved operational stability.
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