Developing Precursors for the Electrodeposition of Early Metal Chalcogenide Semiconductors

过渡金属二卤化物(TMDCs)是式为ME2的无机材料(M=金属；E=硫化物=硫、硒或碲)。它们形成了与二碘化镉相关的二维层状六方结构，其中层内的金属-硫族键非常强，而层间的金属-硫族键弱得多(van der Waals相互作用)--即石墨的无机类似物。本项目将开发新的单源前驱体，既可以作为金属的来源，也可以作为硫族的来源，用于电沉积2D层状TMDC薄膜。我们的首要任务是演示电沉积ME2，并很好地控制沉积薄膜中存在的M：E比和它们的形貌。我们将对它们的功能特性(电和磁)进行基准测试。

Transition metal dichalcogenides (TMDCs) are inorganic materials of formula ME2 (M = metal; E = chalcogen = sulfur, selenium or tellurium). They form 2-dimensional layered hexagonal structures related to that of cadmium diiodide, in which the metal-chalcogen bonding within the layers is very strong, whilst that between the layers is much weaker (van der Waals interactions) - i.e. inorganic analogues of graphite.This project will develop new single source precursors that can act as the source of both the metal and the chalcogen for the electrodeposition of 2D layered TMDC thin films. Our priorities are to demonstrate electrodeposition of ME2 with good control of the M:E ratio present in the deposited films and their morphology. We will benchmark their functional properties (electrical and magnetic).