Investigation of noise characteristics of optoelectronic semiconductor materials.

研究了III-V型半导体合金的冲击电离特性。该项目将研究第四季合金AlGaInP和AlGaAsSb中的雪崩倍增和过量噪声，通过对雪崩光电二极管结构的测量来推断材料特性的信息。特别有趣的是，随着合金成分的变化，冲击电离系数的变化方式。研究的最终目标是确定材料是否适合开发下一代低噪声，高增益带宽产品雪崩光电二极管。

The research is concerned with the characterisation of impact ionisation behaviour in III-V semiconductor alloys. The project will investigate avalanche multiplication and excess noise in the quarternary alloys AlGaInP and AlGaAsSb, using measurements taken on avalanche photodiode structures to infer information about the characteristics of the materials. Of particular interest is the way in which the impact ionisation coefficients change as the composition of the alloy is varied. The end goals of the research are to determine whether materials may be suitable for the development of next generation low noise, high gain-bandwidth product avalanche photodiodes.