The proposed project is in the area of solotronics

拟议的项目是在孤子学领域，也就是在单个原子水平上运行的电子系统。它将继续目前在自旋电子组的工作，该小组正在设计和测量装置，用于在量子点中进行THz辅助隧穿，然后潜在地在单个原子中进行。最终目标是与伦敦纳米技术中心合作，在硅中制造一种P-B-P原子装置。这形成了一种双稳态器件，其中一个电子可以存在于两个P原子中的任何一个上，也可以存在于两者的叠加上。这可以由太赫兹光控制，并最终使用太赫兹SNOM读出。这项工作的其他领域包括：开发自组装硅纳米线单电子晶体管，包括研究这些器件中的介观电子传输，以及研究硅中注入施主的自旋控制。

The proposed project is in the area of solotronics, that is electronic systems that operate on the level of a single atom. It will continue the current work in the spintronic group which are designing and measuring devices for THz assisted tunnelling in quantum dot and then potentially single atoms. The ultimate aim is to fabricate a P-B-P atom device in silicon, in collaboration with the London Centre for Nanotechnology. This forms a bi-stable device in which a single electron can exist on either of the two P atoms or a superposition of both. This can be controlled by THz light and ultimately readout using THz SNOM. Other areas of this work includes: development of self-assembled silicon nanowire single electron transistors including the study mesoscopic electron transport in these devices, as well as the study of spin control of implanted donors in silicon.