Optimization of ohmic contact for GaN MMIC Power Amplifier on silicon for Millimetre-wave Applications using Au Free process

该项目的目标是开发一种无金(Au)的250 nm T栅GaN on Si晶体管和一个运行在Ka-Band的5G应用的功率条演示器。研究将主要集中在使用不同的等离子体工艺技术和光刻策略开发低损耗HEMT欧姆接触，以及使用芯片匹配技术实现和表征的演示功率放大器设计。为适应不断增长的微波和毫米波市场的需要，提出的研究课题对硅基铸造厂和等离子加工工具制造商具有重要意义。目前的射频GaN技术通常是基于Au的，这意味着由于Au污染/扩散到硅基衬底的风险，硅基铸造厂无法适应工艺，这会改变关键性能，导致灾难性后果。该项目将使用行业标准设计工具、最先进的制造工具和技术以及独特的基于行业的特性能力来交付。

The aim of the proposed project is to develop a gold (Au)free based 250nm T-gate GaN on Si transistor and a power bar demonstrator operating at Ka-Band for 5G applications. The research will mainly be focused on the development of a low-loss HEMT ohmic contact using different plasma process techniques and lithography strategies, and a demonstrator power amplifier design, realised and characterised using on-chip matching techniques. The proposed research topic is of great importance to Si-based foundries and plasma processing tool manufactures, motivated by the need to accommodate a growing microwave & millimetre-wave market. Current RF GaN technology is typically Au based, meaning that Si-based foundries are unable to accommodate process due to the risk of Au contamination / diffusion into Si-based substrates, that alter key properties with catastrophic consequences. This project will be delivered using industry standard design tools, state-of-the-art fabrication tools and techniques and unique industry-based characterisation capabilities.