SGER: Low-Resistance Ohmic Contact to P-Type Silicon Carbide

小行星9806897 该SGER项目将探索一种独特的方法，在金属和p型碳化硅之间形成低电阻欧姆接触。该方法是通过引入含1%碳的p-Si外延层来修饰金属-p型SiC界面，并形成p-Si（1%C）/p-SiC异质结。将碳结合在p-Si中以防止C从p-SiC衬底向外扩散，即，以确保加工过程中Si/SiC界面的稳定性。 功函数高于Si（4.9 eV）的金属将沉积在结构的p-Si（1%C）侧。预计这种分层结构将允许在界面处的电子能带弯曲的程度以这样的方式定制，以增强在任一方向上的空穴传导，这取决于偏置极性。表征包括RBS、TEM、X射线和电流/电压评估。 该项目将探索一种新的和创新的方法来形成碳化硅的欧姆接触。 正在探索的想法涉及在碳化硅和具有允许低电阻电流流动的电子特性的金属之间制造材料的外延层。该项目为初步研究设定了具体的目标和方法，以测试这些想法，并且该项目可以适当地处理和解决几个关键问题。 ***

9806897 Olowolafe This SGER project will explore a unique approach to forming low resistance ohmic contacts between metals and p-type silicon carbide. The approach is to modify the metal-p-type SiC interface with the introduction of a thin epitaxial layer of p-Si containing 1% carbon, and forming a p-Si(1%C)/p-SiC heterojunction. Carbon is incorporated in the p-Si to prevent out diffusion of C from the p-SiC substrate, i.e., to ensure stability of the Si/SiC interface during processing. Metals with workfunctions higher than Si(4.9 eV) will then be deposited onto the p-Si(1%C) side of the structure. It is expected that this layered structure would allow the degree of electronic band bending at the interfaces to be tailored in such a way as to enhance hole conduction in either direction, depending on bias polarity. Characterization includes RBS, TEM, X-Ray, and current/voltage evaluation. %%% This project will explore a new and innovative approach to ohmic contact formation to silicon carbide. The idea being explored involves the fabrication of an epitaxial layer of material between the silicon carbide and metal with electronic characteristics which allow low resistance current flow. The project sets specific goals and methods for an initial study to test these ideas, and several key issues can be appropriately addressed and resolved by the project. ***