SGER: Low-Resistance Ohmic Contact to P-Type Silicon Carbide

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9806897 Olowolafe This SGER project will explore a unique approach to forming low resistance ohmic contacts between metals and p-type silicon carbide. The approach is to modify the metal-p-type SiC interface with the introduction of a thin epitaxial layer of p-Si containing 1% carbon, and forming a p-Si(1%C)/p-SiC heterojunction. Carbon is incorporated in the p-Si to prevent out diffusion of C from the p-SiC substrate, i.e., to ensure stability of the Si/SiC interface during processing. Metals with workfunctions higher than Si(4.9 eV) will then be deposited onto the p-Si(1%C) side of the structure. It is expected that this layered structure would allow the degree of electronic band bending at the interfaces to be tailored in such a way as to enhance hole conduction in either direction, depending on bias polarity. Characterization includes RBS, TEM, X-Ray, and current/voltage evaluation. %%% This project will explore a new and innovative approach to ohmic contact formation to silicon carbide. The idea being explored involves the fabrication of an epitaxial layer of material between the silicon carbide and metal with electronic characteristics which allow low resistance current flow. The project sets specific goals and methods for an initial study to test these ideas, and several key issues can be appropriately addressed and resolved by the project. ***