Graphene/boron nitride heterostructures: resonant tunnelling at low temperatures and high magnetic field

最初，我正在使用STM和AFM研究和表征等离子体辅助mbe生长的hBN/HOPG和石墨烯/hBN/HOPG样品的表面特征，以更好地了解这些样品的生长过程和性能。除此之外，我还在研究一种使用AFM沉积和操纵多壁碳纳米管的技术，使这些碳纳米管能够连接到微观电子设备和之前提到的mbe生长样品的表面特征，以充当电接触点。然后，这些触点可用于将设备/特征连接到更大的冲压金触点，这反过来将允许通过测量I/V曲线，光致发光等来测量所连接设备/特征的电子特性。进一步，目标是使用低温组合- afm /STM与磁场发生器来研究mbe生长的石墨烯/hBN结构/样品在磁场存在下的行为。

Initially, I am studying and characterising the surface features of plasma-assisted MBE-grown hBN/HOPG and Graphene/hBN/HOPG samples using STM and AFM to gain a better understanding of the growth process and properties of these samples. Alongside this, I am also studying a technique of depositing and manipulating multi-wall carbon nanotubes using an AFM to allow the tubes to be connected to microscopic electronic devices and surface features of the previously-noted MBE-grown samples to act as electrical contacts. These contacts can then be used to connect the device/feature to larger, stamped gold contacts, which in turn will allow the electronic properties of the connected device/feature to be measured by measuring I/V curves, photoluminescence, etc.Further down the line, the aim is to use a low-temperature combination-AFM/STM with a magnetic field generator to study the behaviour of MBE-grown graphene/hBN structures/samples in the presence of a magnetic field.