Single Photon Detection for Long Wave Infrared

在这个项目中，学生将设计，制造和封装InAs雪崩光电二极管（APD）用于检测低光子水平。该设计将考虑暗电流，响应度和雪崩增益特性的InAs APD。在设计InAs APD的偏置电路和放大器时，将考虑这些特性。一旦成功的APD制造已经实现，APD的线性阵列将被设计和制造，然后与光学透镜和放大器电路集成。

In this project the student will design, fabricate and characterise InAs avalanche photodiodes (APDs) for detection of low photon levels. The design will take into consideration the dark current, responsivity and avalanche gain characteristics of InAs APDs. These characteristics will then in taken into consideration when designing the biasing circuit and amplifiers for InAs APDs. Once successful APD fabrication has been achieved, a linear array of APDs will be designed and fabricated, followed by integration with optical lens and amplifier circuits.