Nanoscale Engineering of Advanced Materials for Future Photonic and Quantum Devices

本项目将探索高空间（亚20nm）分辨率的离子束掺杂在纳米尺度上控制先进材料性能的潜力。将研究电、光学和磁活性掺杂剂，目的是实现精确调谐的局部功能化，这可能导致新的先进材料的发展，从而实现未来的光子和量子技术。这方面的例子包括单光子源的发展、拓扑系统的控制、自旋效应的利用以及半导体材料中量子比特的创造。该项目将主要是实验性的，并涉及与英国和海外的领导小组合作。也有机会开发与正在开发的技术和由此产生的物理特性相关的建模。主要目标：-开发一种磁性杂质离子掺杂半导体纳米结构的方法；-将开发的方法应用于其他离子种类，以提供光学和电子功能；-表征掺杂纳米结构的电子、光学和磁性；-通过局部掺杂，在室温下观察到增强的行为（如诱导磁化），证明增强的功能。

This project will explore the potential of ion beam doping with high spatial (sub-20nm) resolution to control the properties of advanced materials on the nanoscale. Electrically, optically and magnetically active dopants will be studied with the aim of enabling precisely-tuned local functionalization which may lead to the development of new advanced materials to enable the realization of future photonic and quantum technologies. Examples in include the development of single photon sources, control of topological systems, the harnessing of spin effect and the creation of qubits in semiconductor materials. The project will be mainly experimental and involve collaboration with leading groups within the UK and overseas. There is also the opportunity to develop modelling relating to the technique being developed and of the resulting physical properties.Key objectives:- Develop a methodology for the doping of semiconductor nanostructures with magnetic impurity ions;- Apply the developed methodology to other ion species to deliver optical and electronic functionality;- Characterise doped nanostructures for their electronic, optical and magnetic properties;- Demonstrate enhanced functionality via localised doping leading to the observation of enhanced behaviour (e.g. induced magnetization) at room-temperature.