Innovative silicon detector technologies

半导体探测器在粒子物理等领域有着广泛的应用。本论文致力于两种新型探测器的开发。LGAD ATLAS和CMS都在为HL-LHC的升级规划其跟踪器外的精确计时层。这些探测器将配备一种名为低增益雪崩探测器(LGAD)的超快硅探测器，其时间分辨率可达~30ps。LGAD可用于将带电轨迹连接到正确的生产顶点，从而减少在高亮度LHC上堆积的影响。许多其他实验、核物理和医学物理也将受益于精确的计时信息。LGAD使用电荷倍增，这是由于电荷在大电场中移动而引发的雪崩，从而达到皮秒制度。不幸的是，当暴露在高于约1014个粒子/cm2的粒子通量中时，这些设备的性能受到辐射损伤的限制。本论文将对改善LGAD辐射损伤性能的掺杂分布进行模拟，并对辐照前后Teledyne-e2v制作的结构进行快速表征。性能退化(信号损失、增益损失、空间响应不均匀等)的研究作为辐射通量的函数也将被执行。这些研究将需要仔细的实验室测量和测试光束运动。这些测量将验证TCAD模拟，提高我们对这些设备的理解，并导致新的抗辐射优化设计。耗尽单片有源像素传感器(DMAPS)DMAPS是使用标准CMOS工艺制造的位置敏感探测器。这些传感器在粒子物理实验中极具吸引力，因为它们将传感和读出电子集成在一层硅中。这消除了传感器和具有焊料凸起技术的读出芯片之间的互连的需要，这是复杂和昂贵的。DMAPS将成为下一代粒子物理实验的传感器技术选择。本文将重点研究DMPAS技术在两种不同体制下的优化：用于LHC像素探测器进一步升级的耐辐射探测器和用于未来e+e对撞机的高精度低质量探测器。DMPAS的研发计划需要TCAD模拟和传感器特性，包括HL-LHC应用的辐射硬度研究。该计划将与TowerJazz合作，使用其180纳米和65纳米技术。

Semiconductor detectors are used widely in particle physics and other applications. This thesis concentrates on the development of two types of novel detectors.LGADsBoth ATLAS and CMS are planning precision timing layers outside their trackers for the HL-LHC upgrades. These will be instrumented with a type of ultra-fast silicon detector called Low Gain Avalanche Detectors (LGADs) that achieve a timing resolution of ~30 ps. LGADs can be used to connect charged tracks to the correct production vertices and therefore reduce the effect of pile up at the High Luminosity LHC. Many other experiments nuclear and medical physics would also benefit from precision timing information. LGADs use charge multiplication due to the avalanche initiated by a charge moving in large electrical fields to reach the picosecond regime. Unfortunately, the performance of these devices is limited by radiation damage when exposed to particle fluences higher than about 1014 particles/cm2. Simulation of the doping profiles to improve LGAD radiation damage performance and prompt characterization of structures fabricated by Teledyne-e2V before and after radiation exposure will be conducted during this thesis. A study of the performance degradation (loss of signal, loss of gain, inhomogeneous spatial response, etc.) as a function of radiation fluence will also be performed. These studies will require careful laboratory measurements and test beam campaigns. The measurements will validate the TCAD simulations, improve our understanding of these devices, and lead to new optimised rad-hard designs. Depleted Monolithic Active Pixels Sensors (DMAPS)DMAPS are position-sensitive detectors fabricates using standard CMOS processes. These sensors are extremely attractive for experiments in particle physics because they integrate the sensing and the readout electronics in a single layer of silicon. This removes the need for interconnection between the sensor and the readout-chip with the solder bump technology which is complex and expensive. DMAPS will become the sensor technology of choice for the next generation of experiments in particle physics.This thesis will focus on the optimization of the DMPAS technology for two different regimes: radiation-hard detector for further upgrades of the LHC pixel detectors and high-precision low-mass detector for future e+e- colliders. The R&D programme on DMPAS requires simulation with TCAD and sensor characterization, including radiation hardness studies for the HL-LHC application. This programme will be conducted in collaboration with TowerJazz using its 180 nm and 65 nm technologies.