Engineering Semiconductor Devices for Future Scaling of Quantum Technologies

III-V材料为构建光子技术提供了一个天然的平台，因为它们能够通过成分的变化来控制它们的电子特性，量子点（QD）系统的发展就是一个例子。尽管取得了许多成功，但在这些系统内的直接功能工程方面仍然存在挑战。例如，改进（纳米尺度）对量子点生长位置的控制将提高光子器件的性能和产量。同样，以确定性精度对单个量子点进行定制掺杂的能力将允许直接调整功能（例如通过磁性掺杂）。至关重要的是，这种能力应该通过一种适合未来制造的路线来交付，以便商业规模扩大是可行的。该项目将结合曼彻斯特纳米级先进材料工程平台（P-NAME）设施和谢菲尔德国家外延设施的MBE生长能力，以提供这种能力。您的目标是预先播种III-V QD生长，以允许其精确放置，从而实现可扩展的预定义阵列。您还将寻求开发掺杂单个量子点的方法，以进一步设计其光子特性并展示增强的功能。

III-V materials offer a natural platform on which to build photonic technologies due to the ability to control their electronic properties through variation of composition, as is exemplified through the development of quantum dot (QD) systems. Despite the many successes there remain challenges around the direct engineering of functionality within such systems. For example improved (nanoscale) control over the growth position of QDs would enable increased performance and yield of photonic devices. Likewise, the ability to undertaken bespoke doping of individual QDs with deterministic accuracy would allow functionality to be directly tuned (e.g. via magnetic dopants). Critically, such capability should be delivered using a route that is amenable towards future manufacturing so that commercial scaleup is feasible. This project will combine the utilisation of the Platform for Nanoscale Advanced Material Engineering (P-NAME) facility at Manchester alongside MBE growth capability at the National Epitaxy Facility at Sheffield to deliver such a capability. You will aim to pre-seed III-V QD growth to allow their precise placement and thereby enable scalable pre-defined arrays to be realised. You will also seek to develop the methodology to dope individual quantum dots to further engineer their photonic properties and demonstrate enhanced functionality.