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International Conference on Superlattices Nanostructures and Nanodevices 2006

International Conference on Superlattices Nanostructures and Nanodevices 2006
2006 年超晶格纳米结构和纳米器件国际会议
批准号:
EP/D05463X/1
负责人:
Naci Balkan
金额:
$1.55万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2006
资助国家:
英国
项目状态:
已结题
起止时间:
2006 至 --

项目摘要

项目成果

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中文摘要
翻译
该提案的目的是于2006年在伊斯坦布尔组织下一次关于超晶格、纳米结构和纳米器件的国际会议(ICSNN2006)。这可能是该领域最负盛名的国际会议之一.这次会议将是将在维也纳举行的2006年国际半导体物理会议的一个卫星。众所周知,电子器件和光电子器件的尺寸都在逐渐迅速缩小到纳米级。当设备变得如此小时,新的物理现象取代了传统的预期。这导致了新的技术,例如,这种设备中的电流可能是由于几个电子的流动,使得制造单电子开关成为可能,或者从纳米设备发出的光可能是由于几个光子,这可能导致光子逻辑设备。能够研究这样的设备是非常令人兴奋的,因为在这些设备中,物理过程只由少数电子或光子决定。拟议的国际会议旨在研究纳米结构、纳米器件和被称为超晶格的人造晶体结构的所有最新发展和未来的影响。
英文摘要
The aim of the proposal is to organize the next international conference on Superlattices Nanostructures and Nanodevices in 2006 in Istanbul (ICSNN2006). This is 13 th of probably one of the most prestigious international conferences in the field. The conference will be a satellite of the International Conference in the Physics of Semiconductors 2006 to be held in Vienna. It is very well-known that both electronic and optoelectronic devices are gradually shrinking rapidly in size to dimensions in nanometre scale. When devices become so small new physical phenomena takes over conventional expectations. This leads to new technologies, for example electrical current in such devices can be due to the flow of a few electrons, making it possible to make single electron switches, or the emitted light from a nano-device might be due to a few photons which may lead to photonic logic devices. It is very exciting to be able to investigate such devices where physical processes are determined by only a handful of electrons or photons. The proposed international conference aims to look at all the recent developments in and the future implications of nanostructures, nanodevices and the artificial crystal structures known as superlattices
期刊论文(1)
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科研奖励(0)
会议论文
Physica Status Solidi (a) and (c)
Solidi 物理状态 (a) 和 (c)
DOI: --
发表时间: 2007
期刊: Physica Status Solidi (a) and (c)
影响因子: --
作者: [GE Balkan]
通讯作者: GE Balkan
Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
  • 批准号:
    EP/G023972/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $41.86万
  • 财政年份:
    2009
  • 负责人:
    Naci Balkan
  • 依托单位:
海外基金