Building Novel Solid State Electric Double Layer Transistors with Interface Engineering of Ionic Conductive Oxide Superlattices

晶体管是现代电子设备的基本组成部分，它们不断缩小尺寸以实现更高的速度。然而，该技术的发展一直受到栅极介电材料载流子密度低的阻碍。因此，提高可达到的载流子密度对于科学研究和工业应用都变得至关重要。本项目旨在通过实验和理论研究，突破现有硅半导体技术的基本限制，开发具有超高载流子密度和迁移率的新型固态双电层晶体管用胶体纳米立方的先进离子导电氧化物超晶格。

Transistors are the fundamental building blocks of modern electronic devices, which continue to diminish in size to achieve higher speeds. However, the development of this technology has been impeded by low carrier density in the gate dielectric materials. Therefore, increasing the attainable carrier density has become critically important for both scientific research and industrial applications. This project aims at experimental and theoretical development of advanced ionic conductive oxide superlattices with colloidal nanocubes for novel solid state electric double layer transistors, which possess ultrahigh carrier density and mobility, to surmount the fundamental limit of current silicon semiconductor technologies.