Organometallic main group chemistry Strained molecules and reactive intermediates

较重的13族元素Al、Ga和In在我们的现代生活中扮演着重要的角色。除了铝作为大块金属和合金成分的明显存在外，有机金属烷还间接以聚合物（齐格勒/纳塔型聚合）和电子器件（化学气相沉积，CVD）的形式存在。关于有机金属铝化合物的基本知识的缺乏与元素的重要性形成鲜明对比。镓是现代电子器件的关键元件；例如，砷化镓是目前已知的第二重要的半导体。铟用作合金和半导体材料中必不可少的掺杂剂。我们的主要研究活动集中在较重的13族元素铝、镓和铟的化学性质上。我们的项目可以分为两个主要方面。1. 有机金属合成。近年来，我们合成了新的张力二茂铁衍生物。这些分子中的应变是由13族元素桥产生的。类似的物种已被证明可以形成具有潜在应用价值的新型聚合物。在我们的研究计划的这一领域，我们打算合成新的应变分子，可以用作新材料的前体。2. 基质分离和质谱分析。我们将使用这两种方法来识别从气态分子开始的材料沉积过程中发生的高活性分子。这种所谓的化学气相沉积（CVD）是一种生产明确定义的所需材料薄层的技术。我们的计划旨在更深入地了解CVD过程中涉及的分子种类。基于这些见解，预计未来将对材料进行改进。

The heavier group 13 elements Al, Ga, and In play an important role in our modern life. Apart from aluminum's obvious presence as a bulk metal and as a component in alloys, organometallic alanes are indirectly present in the form of polymers (Ziegler/Natta type polymerization) and electronic devices (Chemical Vapor Deposition, CVD). The dearth of basic knowledge about organometallic aluminum compounds contrasts with the importance of the element. Gallium is the key component in modern electronic devices; e.g., GaAs is the second most important semiconductor known today. Indium is used in alloys and in semiconductor materials as an essential doping agent. Our main research activities are focused on the chemistry of the heavier group 13 elements aluminum, gallium, and indium. Our program can be divided in two main areas. 1. Organometallic synthesis. Recently we have synthesized novel strained ferrocene derivatives. The strain in these molecules is generated by a group 13 element bridge. Similar species have been shown to form novel polymers with potential applications. In this area of our research program, we intend to synthesize new strained molecules that can be used as precursors for new materials. 2. Matrix isolation and mass spectrometry. We will use both methods to identify highly reactive molecules that occur in the course of material depositions starting from gaseous molecules. This so-called Chemical Vapor Deposition (CVD) is a technique to produce well-defined thin layers of desired materials. Our program aims at a deeper understanding of the molecular species involved in CVD processes. Based on these insights, improvements of the materials are expected in the future.