A state-of-the-art terahertz quantum device characterization platform

纳米电子和量子光电器件（如量子级联激光器、半导体量子阱光电探测器、半导体光放大器等）的外部性能取决于其模态增益、光损耗、自由载流子吸收、载流子输运等内部工作原理。由于没有实验手段来探测这些关键参数，导致器件性能低于标准的主要机制充其量只是推测。该合同为完成和升级半导体量子器件表征平台所需的组件和仪器的采购提供了必要的支持。该平台将用于对太赫兹量子器件进行电学、光学、光谱、时间和温度相关的测量。这个定制的系统将作为多种研究活动的多功能和启用工具，成为滑铁卢大学最近建成的最先进的量子纳米中心的一个组成部分。该系统对于申请人正在进行的半导体量子光电器件研究项目尤为重要。它将为我们的研究提供重要的能力：1)太赫兹量子级联激光器的开发和表征；2)量子半导体异质结构内部动力学过程的研究；3)高温（230K以上）太赫兹量子级联激光器的优化；4)基于半导体量子结构的太赫兹放大器和太赫兹探测器的探索。最终，它将使我们能够推进高性能半导体元件的开发，用于太赫兹成像，太赫兹通信，生物和环境传感应用。此外，它将有助于扩展我们的研究到新的领域，如纳米技术和纳米电子器件。该系统不仅符合最苛刻的研究应用要求，而且对我们的研究生和其他HQP来说是一个很好的教学工具，这对于为加拿大高科技产业准备合格的劳动力至关重要。这个先进的器件表征平台将丰富我们的研究和教育机会。

The external performance of nanoelectronic and quantum optoelectronic devices such as quantum cascade lasers, semiconductor quantum well photodetectors, semiconductor optical amplifier, etc, is governed by their inner workings as described by modal gain, optical loss, free carrier absorption, carrier transport. Without an experimental means of probing these crucial parameters, the chief mechanisms responsible for sub-par device performance remain speculative at best. This award provides essential support for the acquisition of urgently-needed components and instruments to complete and upgrade a semiconductor quantum device characterization platform. This platform will be used to carry out electrical, optical, spectral, temporal and temperature-dependent measurements of terahertz quantum devices. This customized system will serve as a versatile and enabling tool for multiple research activities, becoming an integrated part of the recently-built and state-of-the-art Quantum-Nano Center at the University of Waterloo. The proposed system is particularly indispensible for the applicants' ongoing research projects on semiconductor quantum optoelectronic devices. It will provide vital capabilities to our research on: 1) development and characterization of THz quantum cascade lasers; 2) investigation of internal dynamic processes of quantum semiconductor heterostructures; 3) optimization of terahertz quantum cascade lasers for high-temperature (above 230K) operation; 4) exploration of terahertz amplifiers and terahertz detectors based on semiconductor quantum structures. Ultimately, it will allow us to advance our efforts towards development of high-performance semiconductor components for THz imaging, THz communication, bio- and environmental sensing applications. In addition, it will help extend our research into new areas such as nanotechnology and nanoelectronic devices. Not only does the proposed system fit the most demanding research application requirements, it is a great teaching tool for our graduate students and other HQP, which is important to prepare qualified workforce for Canadian high-tech industries. This advanced device characterization platform will enrich our research and education opportunities.