InGaN-based micro-light emitting diode (LED) arrays integrated with a driving circuit backplane

集成驱动电路背板的 InGaN 基微型发光二极管 (LED) 阵列

• 批准号: 520229-2017
• 负责人: Ban, Dayan
• 金额: $ 20.68万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=697095
• 关键词: InGaN; based; micro; light; emitting

InGaN/GaN based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical question can be answered - how to achieve high resolution while still retaining high emission efficiency? In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs in a high-resolution two-dimensional (2D) array format. The 2D µ-LED arrays are integrated with a driving circuit backplane. The research objectives include 1) To develop an optimized dry and/or wet etching process for minimizing sidewall defects/impurities, 2) To fabricate 2D blue µ-LED array devices for achieving optimum device performance, 3) To develop a new detaching and transferring approach to integrate the blue µ-LED devices with an IC backplane substrate, 4) To design a CMOS-based IC backplane that drives the 2D µ-LED array for high-quality and uniform optical emission. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing portable device market, such as virtual reality (VR) devices, augmented reality devices, smartphones, wearable electronics.

基于InGaN/GaN的微米级发光二极管(µ-LED)是一种非常有前途的下一代高分辨率、高效率显示器技术，因为它比现有产品具有显著的优势-其亮度水平可以比液晶器件(LCD)和有机发光二极管(OLED)显示器高出几个数量级。它具有低电压要求，并适用于互补金属氧化物半导体(CMOS)和集成电路(IC)的混合组装。然而，在回答一个关键问题之前，这项技术无法商业化--如何在保持高排放效率的同时实现高分辨率？在这个项目中，我们将与我们的行业合作伙伴-滑铁卢高科技公司VueReal Technologies Inc.密切合作，探索和开发一种新的技术方法，以提高高分辨率二维(2D)阵列格式的µ-LED的光发射效率。2Dµ-LED阵列与驱动电路背板集成在一起。研究目标包括：1)开发优化的干法和/或湿法腐蚀工艺，以最大限度地减少侧壁缺陷/杂质；2)制作2D蓝光LED阵列器件，以实现最佳的器件性能；3)开发一种新的分离和转移方法，将蓝光LED器件与IC背板基板集成；4)设计一种基于CMOS的IC背板，驱动2D微米LED阵列以实现高质量和均匀的光发射。该项目还将为高资质个人(HQP)提供一个在设备制造和表征以及显示技术方面获得实践经验的绝佳机会。该合作项目将为滑铁卢大学的设备研发活动向行业合作伙伴提供急需的专业知识和设施。预计从该项目衍生的新颖显示技术/原型可以由行业合作伙伴商业化，这将为行业合作伙伴在这个快速增长的便携式设备市场建立领先地位，如虚拟现实(VR)设备、增强现实设备、智能手机、可穿戴电子产品。