InGaN-based micro-light emitting diode (LED) arrays integrated with a driving circuit backplane
集成驱动电路背板的 InGaN 基微型发光二极管 (LED) 阵列
基本信息
- 批准号:520229-2017
- 负责人:
- 金额:$ 6.9万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Collaborative Research and Development Grants
- 财政年份:2019
- 资助国家:加拿大
- 起止时间:2019-01-01 至 2020-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
InGaN/GaN based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical question can be answered - how to achieve high resolution while still retaining high emission efficiency? In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs in a high-resolution two-dimensional (2D) array format. The 2D µ-LED arrays are integrated with a driving circuit backplane. The research objectives include 1) To develop an optimized dry and/or wet etching process for minimizing sidewall defects/impurities, 2) To fabricate 2D blue µ-LED array devices for achieving optimum device performance, 3) To develop a new detaching and transferring approach to integrate the blue µ-LED devices with an IC backplane substrate, 4) To design a CMOS-based IC backplane that drives the 2D µ-LED array for high-quality and uniform optical emission. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing portable device market, such as virtual reality (VR) devices, augmented reality devices, smartphones, wearable electronics.
基于InGaN/GaN的微米尺寸发光二极管(µ-LED)是下一代高分辨率、高效率显示器的一种非常有前途的技术,因为它比现有产品具有显著的优势-其亮度水平可以比液晶器件(LCD)和有机发光二极管(OLED)显示器高几个数量级。它具有低电压要求,并且适合于混合互补金属氧化物半导体(CMOS)和集成电路(IC)组装。然而,这项技术不能商业化,直到一个关键的问题可以回答-如何实现高分辨率,同时仍然保持高发射效率?在这个项目中,我们将与我们的行业合作伙伴- VueReal Technologies Inc.密切合作,一家总部位于滑铁卢的高科技公司,探索和开发一种新的技术方法,可以提高高分辨率二维(2D)阵列格式的µ-LED的光发射效率。2D µ-LED阵列与驱动电路背板集成。研究目标包括:1)开发一种优化的干法和/或湿法刻蚀工艺,以最大限度地减少侧壁缺陷/杂质; 2)制作二维蓝色µ-LED阵列器件,以获得最佳的器件性能; 3)开发一种新的分离和转移方法,以将蓝色µ-LED器件与IC背板衬底集成,4)设计基于CMOS的IC背板,驱动2D µ-LED阵列实现高质量和均匀的光发射。该项目还将为高素质人员(HQP)提供一个极好的机会,以获得设备制造和表征以及显示技术的实践经验。该合作项目将为行业合作伙伴的设备研发活动提供滑铁卢大学急需的专业知识和设施。预计从该项目衍生的新型显示技术/原型可以由行业合作伙伴商业化,这将在这个快速增长的便携式设备市场中为行业合作伙伴建立领导地位,例如虚拟现实(VR)设备,增强现实设备,智能手机,可穿戴电子产品。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ban, Dayan其他文献
Porosity Modulated High-Performance Piezoelectric Nanogenerator Based on Organic/Inorganic Nanomaterials for Self-Powered Structural Health Monitoring
- DOI:
10.1021/acsami.0c12874 - 发表时间:
2020-10-21 - 期刊:
- 影响因子:9.5
- 作者:
Rana, Md Masud;Khan, Asif Abdullah;Ban, Dayan - 通讯作者:
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A self-powered multi-broadcasting wireless sensing system realized with an all-in-one triboelectric nanogenerator
- DOI:
10.1016/j.nanoen.2019.05.073 - 发表时间:
2019-08-01 - 期刊:
- 影响因子:17.6
- 作者:
Khan, Asif Abdullah;Mahmud, Alam;Ban, Dayan - 通讯作者:
Ban, Dayan
Maximizing piezoelectricity by self-assembled highly porous perovskite-polymer composite films to enable the internet of things
- DOI:
10.1039/d0ta03416a - 发表时间:
2020-07-21 - 期刊:
- 影响因子:11.9
- 作者:
Khan, Asif Abdullah;Rana, Md Masud;Ban, Dayan - 通讯作者:
Ban, Dayan
Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot.
- DOI:
10.1039/d3na00638g - 发表时间:
2023-10-10 - 期刊:
- 影响因子:4.7
- 作者:
Rezeq, Moh'd;Abbas, Yawar;Wen, Boyu;Wasilewski, Zbig;Ban, Dayan - 通讯作者:
Ban, Dayan
Thermal dynamic imaging of mid-infrared quantum cascade lasers with high temporal-spatial resolution
- DOI:
10.1063/5.0013344 - 发表时间:
2020-08-28 - 期刊:
- 影响因子:3.2
- 作者:
Wang, Siyi;Xu, Chao;Ban, Dayan - 通讯作者:
Ban, Dayan
Ban, Dayan的其他文献
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{{ truncateString('Ban, Dayan', 18)}}的其他基金
High-performance perovskite-based energy harvesting devices
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RGPIN-2022-03161 - 财政年份:2022
- 资助金额:
$ 6.9万 - 项目类别:
Discovery Grants Program - Individual
Micrometer-sized photodetectors for selective-area transferring and integration on a heterogeneous substrate
微米级光电探测器,用于异质基板上的选择性区域转移和集成
- 批准号:
531859-2018 - 财政年份:2021
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Advanced terahertz quantum cascade lasers for frequency comb and mode locking operation
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High-performance nanogenerator devices for energy harvesting applications
用于能量收集应用的高性能纳米发电机装置
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549228-2019 - 财政年份:2020
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Alliance Grants
Advanced terahertz quantum cascade lasers for frequency comb and mode locking operation
用于频率梳和锁模操作的先进太赫兹量子级联激光器
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RGPIN-2016-04661 - 财政年份:2020
- 资助金额:
$ 6.9万 - 项目类别:
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Micrometer-sized photodetectors for selective-area transferring and integration on a heterogeneous substrate
微米级光电探测器,用于异质基板上的选择性区域转移和集成
- 批准号:
531859-2018 - 财政年份:2020
- 资助金额:
$ 6.9万 - 项目类别:
Collaborative Research and Development Grants
InGaN-based micro-light emitting diode (LED) arrays integrated with a driving circuit backplane
集成驱动电路背板的 InGaN 基微型发光二极管 (LED) 阵列
- 批准号:
520229-2017 - 财政年份:2020
- 资助金额:
$ 6.9万 - 项目类别:
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$ 6.9万 - 项目类别:
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微米级光电探测器,用于异质基板上的选择性区域转移和集成
- 批准号:
531859-2018 - 财政年份:2019
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RGPIN-2016-04661 - 财政年份:2019
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