Light switchable magnetic materials for nonvolatile memory applications: LI-RAM

与多核计算机体系结构相关的巨大能源需求，以及未来10-15年云存储和计算需求的预期指数增长，导致了“电源墙”，导致半导体行业对新的非易失性存储技术的强烈探索。非易失性存储器（NVM）结合了高存储密度、快速随机访问和非易失性，允许跨多层存储器结构集成，但具有更低的泄漏电流和更低的功耗要求。迄今为止，最有前途的非易失性存储技术包括自旋传递扭矩随机存取存储器（STT-RAM）和相变随机存取存储器（PCRAM）。两者都具有与SRAM相当的读写速度和更低的功耗要求，但目前主要受限于大单元尺寸，这降低了芯片上每平方区域的存储容量。

The enormous energy demands associated with multicore computer architectures and the expected exponential growth over the next 10-15 of cloud storage and computing needs has led to the "power wall", causing an intense search for new nonvolatile memory technologies within the semiconductor sector. Nonvolatile memory (NVM) combines high storage density, fast random access, and non-volatility allowing integration across multiple layers of the memory hierarchy but with decreased leakage current and lower power requirements. The most promising emergent nonvolatile memory technologies to date include spin-transfer torque random-access memory (STT-RAM), and phase-change random-access memory (PCRAM). Both exhibit comparable read/write speeds to SRAM and decreased power requirements, but are currently limited predominantly by large cell sizes, which decreases the memory capacity per square area on a chip.