Development of a protocol for high-resolution Auger and Transmission Electron Microscopy / Spectroscopy analysis on advanced III-V semiconductor devices

先进的光子器件是光通信网络和数据中心的基础。这些设备是由复杂的材料结构，涉及几个制造步骤，并在恶劣的条件下运行。了解这些材料的结构是开发新器件和了解器件在制造和运行过程中的演变和退化的关键。在这个项目中，我们使用先进的高空间分辨率的结构和化学表征技术研究光子集成电路的组件。我们将开发先进的透射电子显微镜、电子能量损失光谱和表面分析方法，以在不同的长度尺度上（从纳米到原子水平）表征光子器件的组成和结构。使用这些方法，我们将提供给工业合作伙伴，ArtIC Photonics，了解他们生产的光子集成电路，这些设备的纳米级组件在制造过程中的演变，以及这些设备在工作条件下的退化。

Advanced photonic devices are at the basis of optical telecommunication networks and data centres. Thesedevices are built from complex materials structures, involving several fabrication steps and operate in harshconditions. Knowledge of the structure of these materials is key for developing new devices and understandingthe evolution and degradation of devices during fabrication and operation. In this project we investigatecomponents of photonics integrated circuits using advanced structural and chemical characterization techniqueswith high spatial resolution. We will develop advanced transmission electron microscopy, electron energy lossspectroscopy, and surface analysis methods to characterize, at different lengthscales -from nanometers to theatomic level- the composition and structure of photonic devices. Using these methodologies, we will provide tothe industrial partner, ArtIC Photonics, understanding of the photonic integrated circuits they produce, theevolution of nanoscale components of these devices during fabrication, and the degradation of these devicesduring operating conditions.