Bottom-up Design and Optimization of Ferroelectric Van der Waals Heterostructure Electronics

虽然过去几十年在计算机和消费电子产品方面取得了显著的进步，但未来移动的/可穿戴电子产品仍有巨大的未开发潜力，例如超低功耗（电池寿命显著延长）健康监测设备和起皱的电子纺织品。这种突破性的电子产品可以使用基于新材料系统和设计创新的新技术来构建。二维（2D）材料由于其独特的电学、机械和表面特性，是从根本上改变电子设备技术的有力竞争者。二维材料最突出的特征之一是它们能够使用简单的制造工艺垂直堆叠，从而产生称为货车德瓦尔斯（vdW）异质结构的结构。虽然这些结构可以为新型器件设计提供看似无穷无尽的机会，但最先进的2D材料器件远未达到最佳性能，这主要是由于缺乏适当的设计工具。此外，如果将铁电（FE）材料与vdW异质结构结合以降低功率损耗，则器件设计将变得更具挑战性。 这个为期五年的研究计划的总体目标是通过建模和模拟来提高新型FE vdW异质结构电子器件的知识。特别是，一个国家的最先进的设计工具将开发模拟，分析和优化这些设备。为了确保高水平的准确性，理论研究结果将通过国际研究合作与实验结果进行校准。该研究计划的成果将包括对FE vdW异质结构器件的深入理论理解，以及通过利用材料特性和器件参数来设计性能的方法。此外，强大的仿真软件将可供学术界的研究人员以及半导体行业的器件工程师使用。 加拿大和国际半导体公司将获得经济利益（预计2019-2023年期间的复合年增长率为9%，预计2023年的市场价值为7040亿美元），通过提供预先验证的设计工具，可以开发2D电子设备并降低研发成本。参加该研究项目的学生将获得新型2D材料，FE材料和电子器件的先进知识，以及主要半导体公司（例如，英特尔、三星、IBM），这将使它们备受追捧。此外，他们还将通过在国际会议和高影响力期刊上传播研究发现为学术工作做好充分准备。该计划将通过在竞争激烈的纳米电子领域培训下一代创新者来加强加拿大的研究潜力。

While the past few decades have brought remarkable evolutions in computers and consumer electronics, there remains significant untapped potential for future mobile/wearable electronics such as ultra-low-power (for significantly longer battery life) health monitoring devices and wrinkled e-textiles. Such breakthrough electronics can be built using new technologies based on novel material systems and design innovations. Two-dimensional (2D) materials are strong contenders to radically shift the technology of electronic devices due to their unique electrical, mechanical and surface properties. One of the most prominent features of 2D materials is their ability to be stacked vertically using a simple fabrication process, leading to structures called van der Waals (vdW) heterostructures. While these structures can provide seemingly endless opportunities for novel device design, state-of-the-art 2D material devices are far from achieving optimal performances, largely due to a lack of proper design tools. Moreover, if ferroelectric (FE) materials are combined with vdW heterostructures to reduce power loss, device designs become even more challenging. The overall objective of this five-year research program is to advance knowledge in novel FE vdW heterostructure electronic devices by means of modeling and simulation. In particular, a state-of-the-art design tool will be developed to simulate, analyze, and optimize such devices. To ensure high-level accuracy, theoretical findings will be calibrated against experimental results through international research collaborations. Outcomes of the research program will include an in-depth theoretical understanding of FE vdW heterostructure devices and approaches to engineering the performance by exploiting material properties and device parameters. Moreover, powerful simulation software will be available for use by researchers within academia as well as device engineers in semiconductor industry. Economic benefits will accrue to Canada-based and international semiconductor companies (compound annual growth rate of 9% is forecasted for the 2019-2023 period with expected market value of US $704B in 2023), through the provision of a pre-validated design tool that enables the development of 2D electronic devices and reduced R&D costs. Students participating in this research program will acquire advanced knowledge of novel 2D materials, FE materials and electronic devices as well as hands-on technical skills required for device engineers in major semiconductor companies (e.g., Intel, Samsung, IBM), which will make them highly sought after. In addition, they will also be well prepared for academic jobs by disseminating research discovery at international conferences and in high-impact journals. This program will strengthen Canada's research potential by training the next generation of innovators in the competitive nanoelectronics field.