Boron Doping of GaN

西蒙弗雷泽大学的Kavanagh小组将与密歇根大学的Goldman小组合作，用硼（B）原子取代半导体氮化镓（GaN）中的部分镓（Ga），形成氮化镓硼（GaBN）。添加B将改变GaN的性质，包括其发光能力和导电性。在极端情况下，用B代替所有Ga，形成BN，其是绝缘体和公知的可加工陶瓷。Kavanagh实验室拥有使用分子气体硼氮烷的经验，该气体含有B，他们已用于在铜衬底上生长BN晶体单层。在单层形式中，BN被应用于新颖的二维器件结构中，通常将导体如单层石墨（石墨烯）与半导体（例如石墨烯）连接。二硫化铈）。他们将帮助高盛实验室的成员在他们已经在生长GaN单晶的低压生长室中添加硼氮烷气体泄漏。B在GaN中的最大溶解度取决于材料形成中使用的有效温度。该室具有使用衬底加热、离子注入和等离子体源来控制温度和生长速率的方法。 生长到合适的衬底上的GaBN的性质将在两所大学的实验室和非原位实验室中使用各种表征技术进行确认。每个小组的成员将接触到他们各自实验室所没有的新能力和实验分析。联合出版物和演示文稿，以及一种新的氮化物半导体，增加了现有的范围，这类重要的光电材料。

The Kavanagh group at Simon Fraser University will collaborate with the Goldman group at the University of Michigan towards replacing some of the gallium (Ga) in the semiconductor gallium nitride (GaN) with boron (B) atoms to form gallium boron nitride (GaBN). Adding B will change the properties of GaN including its ability to emit light and its conductivity. In the extreme case, replacing all of the Ga with B one forms BN which is an insulator and well-known machinable ceramic. The Kavanagh lab has experience with a molecular gas, borazine, that contains B which they have used to grow monolayers of crystalline BN on copper substrates. In monolayer form, BN is being applied in novel two-dimensional device structures often interfacing a conductor such as monolayer graphite (graphene) with a semiconductor (eg. molydenum disulfide). They will help members of the Goldman lab add a borazine gas leak into their low pressure growth chamber where they already are growing GaN single crystals. The maximum solubility of B in GaN depends on the effective temperature used in the material formation. The chamber has methods to control the temperature and rate of growth using substrate heating, ion implantation and plasma sources. The properties of GaBN grown onto suitable substrates will be confirmed with various characterization techniques available within the chamber and ex situ at both universities. The members of each team will be exposed to new capabilities and experimental analyses that are not available at their separate laboratories. Joint publications and presentations are expected as well as a novel nitride semiconductor that adds to the existing range of this important class of optoelectronic materials.