间隙锌团簇对p型ZnO:N薄膜导电稳定性的影响机理研究

ZnO在短波长光电子器件领域具有潜在的应用前景，但缺乏稳定的p型ZnO已成为阻碍其应用的瓶颈，也直接导致p型ZnO逐步进入研究低谷。探索影响p型ZnO导电稳定性的决定性因素，是当前国际上亟待解决的重要科学难题。基于前期多年的研究积累，本申请提出“间隙锌团簇可能是影响p型ZnO导电稳定性的最具普遍性和决定性的因素”的新观点。为此，本项目拟结合实验和理论计算，针对N掺杂ZnO体系，深入研究间隙锌团簇对p型ZnO:N薄膜导电稳定性的影响机理。研究内容含：1) 探索有效调控ZnO薄膜中间隙锌团簇的方法；2) 研究间隙锌团簇的形成和演化机制；3) 制备可重复p型ZnO:N薄膜，研究其导电微观机制；4) 建立间隙锌团簇浓度与p型ZnO:N薄膜导电稳定性随时间及外界环境的变化规律，研究间隙锌团簇对p型ZnO:N薄膜导电稳定性的影响机理。希望通过本项目的研究，为制备高稳定性的p型ZnO提供有效途径和参考。

ZnO has potential application prospects in the field of short-wavelength optoelectronic devices. But the lack of stable p-type ZnO materials has become a bottleneck hindering its application, and it has directly led to the p-type ZnO gradually entering the research trough. Exploring the decisive factors affecting the conductivity stability of p-type ZnO is an important scientific and difficult problem to be solved urgently in the world. Based on the previous years of research accumulation, this present application proposes that zinc interstitial clusters may be the most common and decisive factor affecting the conductivity stability of p-type ZnO. For N-doped ZnO systems, the mechanism of the influence of zinc interstitial clusters on the conductivity stability of p-type ZnO:N films was investigated in depth by experimental and theoretical calculations. The research contents include: (1) Explore an effective method for regulating the zinc interstitial clusters in ZnO thin films; (2) Study the formation and evolution mechanism of zinc interstitial clusters; (3) Prepare repeatable p-type ZnO:N film and study the microscopic mechanism of p-type conductivity; (4) Establish the relationship between the concentration of zinc interstitial clusters and the conductivity of p-type ZnO:N thin films with time and external environment, and study the mechanism of the influence of zinc interstitial clusters on the conductivity stability of p-type ZnO:N films. It is hoped that through the research of this project, it provides an effective way and reference for the preparation of high stability p-type ZnO materials.