Effect of thermal evolution of point defects on the electrical properties of nitrogen-implanted ZnO thin films
Effect of thermal evolution of point defects on the electrical properties of nitrogen-implanted ZnO thin films
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点缺陷热演化对氮注入ZnO薄膜电性能的影响
DOI：
10.1007/s10854-020-02973-z
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发表时间：
2020-01
期刊：
影响因子：
--
通讯作者：
Chunyang Kong
中科院分区：
文献类型：
--
作者：
Wanjun Li;Chunni Wang;Jianwen Ma;Hong Zhang;Yuanqiang Xiong;Honglin Li;Lijuan Ye;Haibo Ruan;Guoping Qin;Liang Fang;Chunyang Kong
利用拉曼背散射谱和X射线光电子能谱研究了氮注入ZnO薄膜（ZnO：N）中的点缺陷随退火温度的变化。与Zn I相关的施主缺陷（例如，Zni-N复合物或Zniclusters）易于通过后退火过程解离以形成自由移动的隔离的Zn缺陷，这对于实现ZnO：N膜的p型转变是极其有利的。但随着退火温度的升高，离子注入产生的大量Ni原子迁移到ZnO：N薄膜的近表面形成NC/NH/NO物种，从而降低了ZnO：N薄膜中NO受体缺陷的浓度。此外，虽然在较高温度下的后退火可以形成更多的No受主缺陷，但新产生的（N2）O双施主缺陷具有严重的自补偿效应。因此，在升高的后退火温度下，Zn i相关的施主和有效受主的浓度逐渐降低，这是所有ZnO：N膜呈现n型导电性并且不转化为p型导电性的原因。
Raman backscattering spectroscopy and X-ray photoelectron spectroscopy have been applied to study thermal evolution of point defects as a function of post-annealing temperature in nitrogen-implanted ZnO thin films (ZnO:N). Zni-related donor defects (e.g., Zni-NOcomplexes or Zniclusters) are prone to dissociation to form a freely moving isolated Znidefect by post-annealing process, which is extremely advantageous for achieving a p-type transition of the ZnO:N film. However, lots of Niatoms induced by ion implantation could migrate to the near-surface of the films to form NC/NH/NO species with increasing post-annealing temperature, resulting in a lower concentration of NOacceptor defects in ZnO:N films. In addition, although post-annealing at higher temperatures can form more No acceptor defects, the newly generated (N2)Odouble donor defects have a severe self-compensating effect. Consequently, the concentration of both the Zni-related donors and effective acceptors gradually decreases at elevated post-annealing temperatures, which is the reason why all ZnO:N films present n-type conductivity and do not convert to p-type conductivity.
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