Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes
Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes
复制标题
快速热中子辐射对 GaN PIN 二极管的影响
DOI：
10.1109/tns.2016.2630061
复制
发表时间：
2017
影响因子：
1.8
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Lv Ling;Li Peixian;Ma Xiaohua;Liu Linyue;Yang Ling;Zhou Xiaowei;Zhang Jincheng;Cao Yanrong;Bi Zhen;Jiang Teng;Zhu Qing;Hao Yue
We studied how irradiation with fast (14 MeV) and thermal (<0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in <inline-formula> <tex-math notation="LaTeX">$\text {V}_{\mathrm {{Ga}}}$ </tex-math></inline-formula>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the <inline-formula> <tex-math notation="LaTeX">$\text {E}_{\mathrm {{2}}}^{\mathrm {{high}}}$ </tex-math></inline-formula> phonon mode.
We studied how irradiation with fast (14 MeV) and thermal (<0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in <inline-formula> <tex-math notation="LaTeX">$\text {V}_{\mathrm {{Ga}}}$ </tex-math></inline-formula>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the <inline-formula> <tex-math notation="LaTeX">$\text {E}_{\mathrm {{2}}}^{\mathrm {{high}}}$ </tex-math></inline-formula> phonon mode.
登录
查看更多内容
DOI：
10.1007/s11431-013-5422-z
发表时间：
2013-11
期刊：
Science China Technological Sciences
影响因子：
--
作者：
Fenghua Li;Xu Gao;Yu Yuan;Jinshe Yuan;Min Lu
通讯作者：
Fenghua Li;Xu Gao;Yu Yuan;Jinshe Yuan;Min Lu
DOI：
10.1016/j.microrel.2011.04.022
发表时间：
2011-12
期刊：
Microelectron. Reliab.
影响因子：
--
作者：
L. Lv;J. Ma;Yanrong Cao;Jinli Zhang;W. Zhang;Longqiao Li;S. R. Xu;Xiao-hua Ma;X. Ren
通讯作者：
L. Lv;J. Ma;Yanrong Cao;Jinli Zhang;W. Zhang;Longqiao Li;S. R. Xu;Xiao-hua Ma;X. Ren
影响因子：
1.1
作者：
J. Limb;D. Yoo;J. Ryou;Wonseok Lee;S. Shen;R. Dupuis
通讯作者：
J. Limb;D. Yoo;J. Ryou;Wonseok Lee;S. Shen;R. Dupuis
影响因子：
3.9
作者：
In‐Hwan Lee;A. Polyakov;N. B. Smirnov;A. Govorkov;E. Kozhukhova;N. Kolin;V. Boiko;A. V. Korulin-A.-V.-Koruli
通讯作者：
In‐Hwan Lee;A. Polyakov;N. B. Smirnov;A. Govorkov;E. Kozhukhova;N. Kolin;V. Boiko;A. V. Korulin-A.-V.-Koruli
影响因子：
3.2
作者：
S. Li;J. Zhang;C. Beling;Kezhi Wang;Rongxin Wang;M. Gong;C. Sarkar
通讯作者：
S. Li;J. Zhang;C. Beling;Kezhi Wang;Rongxin Wang;M. Gong;C. Sarkar