Photoemission cross section: A critical parameter in the impurity photovoltaic effect
Photoemission cross section: A critical parameter in the impurity photovoltaic effect
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光电发射截面：杂质光伏效应的关键参数
DOI：
10.1088/1674-1056/26/1/018503
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发表时间：
2017
影响因子：
1.7
通讯作者：
Zhou Lang
中科院分区：
文献类型：
--
作者：
Yuan Jiren;Huang Haibin;Deng Xinhua;Yue Zhihao;He Yuping;Zhou Naigen;Zhou Lang
采用数值模拟的方法研究了掺铟硅太阳电池中光电发射截面在杂质光伏效应中的作用。的光伏参数（短路电流密度，开路电压，和转换效率）的IPV太阳能电池的计算作为可变的电子和空穴光电发射截面的函数。结果表明，电子和空穴的光电发射截面在IPV效应中起关键作用。当电子光电发射截面为cm时，如果引入IPV杂质，则IPV电池的转换效率η总是具有负增益（）。大的空穴光电发射横截面可不利地影响IPV太阳能电池性能。小的空穴光电发射截面和大的电子光电发射截面的组合可以实现IPV太阳能电池的更高的转换效率，因为大的电子光电发射截面可以增强从杂质能级到导带的必要的电子跃迁，并且小的空穴光电发射截面可以减少不必要的子带隙吸收。结果表明，具有小（大）空穴光电子发射截面和大（小）电子光电子发射截面的杂质，其能级在价带（或导带）边附近，可能适合于IPV太阳电池。这些结果有助于根据杂质的电子和空穴光电发射截面判断杂质是否适合用于IPV太阳能电池。
A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters (short-circuit current density, open-circuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is cm , the conversion efficiency η of the IPV cell always has a negative gain () if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small (large) hole photoemission cross section and large (small) electron photoemission cross section, whose energy levels are near the valence (or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.
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DOI：
10.1088/0022-3719/15/28/016
发表时间：
1982-10
期刊：
Journal of Physics C: Solid State Physics
影响因子：
--
作者：
W. Schelter;W. Hell;R. Helbig;M. Schulz
通讯作者：
W. Schelter;W. Hell;R. Helbig;M. Schulz
影响因子：
8.7
作者：
S. Khelifi;J. Verschraegen;M. Burgelman;A. Belghachi
通讯作者：
S. Khelifi;J. Verschraegen;M. Burgelman;A. Belghachi
影响因子：
3.2
作者：
S. Karazhanov
通讯作者：
S. Karazhanov
影响因子：
3.2
作者：
M. Schmeits;A. A. Mani-A.
通讯作者：
M. Schmeits;A. A. Mani-A.
影响因子：
3.2
作者：
G. Parker;S. D. Brotherton;I. Gale;A. Gill
通讯作者：
G. Parker;S. D. Brotherton;I. Gale;A. Gill