Design of a high information-density multiple valued 2-read 1-write register file
Design of a high information-density multiple valued 2-read 1-write register file
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高信息密度多值2读1写寄存器堆的设计
DOI:
10.1587/elex.9.958
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发表时间:
2012-06
影响因子:
0.8
通讯作者:
Yu, Zhiyi
中科院分区:
文献类型:
--
作者:
Zhang, Yuejun;Wang, Pengjun;Xiong, Baoyu;Yu, Zhiyi
: In this paper, a multiple valued register file (MVRF) with 2-read 1-write circuit is designed in TSMC Low Power 65 nm CMOS. High V TH and Low V TH transistors are organized together to realize a multiple-threshold Literal Gate, and then connect with pass
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DOI:
10.1587/elex.8.1473
发表时间:
2011
期刊:
IEICE Electron. Express
影响因子:
--
作者:
C. Prabhu;A. Singh
通讯作者:
C. Prabhu;A. Singh
DOI:
--
发表时间:
2010
期刊:
--
影响因子:
--
作者:
Vasundara Patel;K. Gurumurthy;V. Sheshadri;Sivaram Krishnan
通讯作者:
Vasundara Patel;K. Gurumurthy;V. Sheshadri;Sivaram Krishnan
DOI:
10.1109/isscc.2011.5746308
发表时间:
2011-04
期刊:
2011 IEEE International Solid-State Circuits Conference
影响因子:
--
作者:
G. Ditlow;R. Montoye;S. Storino;S. M. Dance;S. Ehrenreich;Bruce M. Fleischer;T. Fox;Kyle M. Holmes;Junichi Mihara;Yutaka Nakamura;S. Onishi;Robert Shearer;D. Wendel;Leland Chang
通讯作者:
G. Ditlow;R. Montoye;S. Storino;S. M. Dance;S. Ehrenreich;Bruce M. Fleischer;T. Fox;Kyle M. Holmes;Junichi Mihara;Yutaka Nakamura;S. Onishi;Robert Shearer;D. Wendel;Leland Chang
DOI:
10.1109/isscc.1998.672432
发表时间:
1998-02
期刊:
1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156)
影响因子:
--
作者:
T. Hanyu;K. Teranishi;M. Kameyama
通讯作者:
T. Hanyu;K. Teranishi;M. Kameyama
影响因子:
2.4
作者:
Santanu Mahapatra;A. M. Ionescu
通讯作者:
Santanu Mahapatra;A. M. Ionescu