Design of a high information-density multiple valued 2-read 1-write register file

Design of a high information-density multiple valued 2-read 1-write register file
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高信息密度多值2读1写寄存器堆的设计

DOI:
10.1587/elex.9.958
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发表时间:
2012-06
影响因子:
0.8
通讯作者:
Yu, Zhiyi
Yu, Zhiyi
中科院分区:
工程技术4区
文献类型:
--
作者:
Zhang, Yuejun;Wang, Pengjun;Xiong, Baoyu;Yu, Zhiyi

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本文在TSMC低功耗65 nm CMOS芯片上设计了一种2读1写的多值寄存器文件(MVRF)。高VTH和低VTH晶体管被组织在一起,以实现多阈值的文字门,然后连接到通过
: In this paper, a multiple valued register file (MVRF) with 2-read 1-write circuit is designed in TSMC Low Power 65 nm CMOS. High V TH and Low V TH transistors are organized together to realize a multiple-threshold Literal Gate, and then connect with pass
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