A novel sandwich capacitive accelerometer with a symmetrical structure fabricated from a D-SOI wafer
A novel sandwich capacitive accelerometer with a symmetrical structure fabricated from a D-SOI wafer
复制标题
一种由 D-SOI 晶圆制成的具有对称结构的新型夹层电容式加速度计
DOI:
10.1088/0960-1317/22/8/085031
复制
发表时间:
2012-08
影响因子:
2.3
通讯作者:
Wang Yuelin
中科院分区:
文献类型:
--
作者:
Zhou Xiaofeng;Che Lufeng;Wu Jian;Li Xiaolin;Wang Yuelin
This paper presents a novel sandwich capacitance accelerometer with a symmetrical double-sided beam-mass structure. The symmetrical beam-mass structure is fabricated from a double-device-layer silicon-on-insulate (D-SOI) wafer. The proof mass is suspended by eight beams at the corners on both sides. The beams are fabricated at the device layers of the SOI wafer; the cross-section of the beams is a standard trapezoid. The thickness of the beams can be well controlled because it is determined by the thickness of the device layer in the SOI wafer, and there is no dry etching process in the accelerometer fabrication. The resonance frequency of the developed accelerometer is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 812 Hz, respectively. The accelerometer has an opened-loop capacitance sensitivity of 8.7 pF g−1, a closed-loop sensitivity of 1.39 V g−1 and a nonlinearity of 0.49% over the range of 1 g. The measured input, referred to as the noise floor of the accelerometers, with an interface circuit is 2.4 µg (√Hz)−1 (0–100 Hz).
登录
查看更多内容
DOI:
10.1016/s1386-2766(00)x8001-2
发表时间:
2000-10
期刊:
--
影响因子:
--
作者:
M. Bao
通讯作者:
M. Bao
影响因子:
2.7
作者:
Junseok Chae;H. Kulah;Khalil Najafi
通讯作者:
Junseok Chae;H. Kulah;Khalil Najafi
影响因子:
1.3
作者:
Hu, Qifang;Gao, Chengchen;Yang, Gang
通讯作者:
Yang, Gang
DOI:
10.1088/0960-1317/19/7/075006
发表时间:
2009-07-01
影响因子:
2.3
作者:
Hsu, Chia-Pao;Yip, Ming-Chuen;Fang, Weileun
通讯作者:
Fang, Weileun
影响因子:
2.7
作者:
Yazdi, N;Najafi, K
通讯作者:
Najafi, K