Influence of deep level defects on carrier lifetime in CdZnTe:In

Influence of deep level defects on carrier lifetime in CdZnTe:In
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深能级缺陷对 CdZnTe:In 载流子寿命的影响

DOI:
10.1063/1.4914159
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发表时间:
2015-03
影响因子:
3.2
通讯作者:
Fu Xu
Fu Xu
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Guo Rongrong;Jie Wanqi;Wang Ning;Zha Gangqiang;Xu Yadong;Wang Tao;Fu Xu

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The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining 241Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.
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