Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
复制标题
通过电场和应变消除 4HâSiC 中 TS 缺陷的取向简并性
DOI：
10.1088/1367-2630/abfb3e
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发表时间：
2021
影响因子：
3.3
通讯作者：
H. B. Weber
中科院分区：
文献类型：
--
作者：
M. Rühl;J. Lehmeyer;R. Nagy;M. Weisser;M. Bockstedte;M. Krieger;H. B. Weber
我们提出了一种新发现的4H碳化硅TS缺陷的光致发光（PL）研究。通过低温（≈4 K）系综测量，研究了静电场和局部应变对光谱性质的影响。在石墨烯电极施加的静电场作用下，观察到相对于主要结晶轴的四个不同电场角度的线分裂模式。另外，系统地改变激发偏振角可以获得更详细的信息。总的来说，这些数据允许提取相关电偶极矩的方向，揭示晶体基面上潜在TS缺陷的三个不同方向。我们还提出了三个迄今未报道的PL线（836.7 nm, 889.7 nm, 950.0 nm）作为TS线的面外取向对应的候选线。与电场作用下的对称性破缺类似，应变可以降低局部对称性。我们研究了应变诱导的线分裂模式，也产生了三倍的定向根据斯塔克效应测量的TS线。对电场和应变场的响应都非常强，导致TS1线位移ħ12 meV。结合我们的发现，我们可以缩小TS缺陷的可能几何形状。
We present a photoluminescence (PL) study of the recently discovered TS defect in 4H silicon carbide. It investigates the influence of static electric fields and local strain on the spectral properties by means of low temperature (≈ 4 K) ensemble measurements. Upon application of static electric fields exerted by graphene electrodes, line splitting patterns are observed, which are investigated for four different angles of the electric field with respect to the principal crystallographic axes. More detailed information can be gained when additionally the excitation polarization angle is systematically varied. Altogether, the data allow for extracting the direction of the associated electric dipole moments, revealing three distinct orientations of the underlying TS defect inside the crystal's basal plane. We also present three so far unreported PL lines (836.7 nm, 889.7 nm, 950.0 nm) as candidates for out-of-plane oriented counterparts of the TS lines. Similar to symmetry breaking by the electric field applied, strain can reduce the local symmetry. We investigate strain-induced line splitting patterns that also yield a threefold directedness of the TS lines in accordance with the Stark effect measurements. The response to both electrical and strain fields is remarkably strong, leading to line shifts of ħ12 meV of the TS1 line. Combining our findings, we can narrow down possible geometries of the TS defect.
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影响因子：
4
作者：
M. Rühl;Ch. Ott;Stephan Götzinger;Michael Krieger;Heiko B. Weber
通讯作者：
M. Rühl;Ch. Ott;Stephan Götzinger;Michael Krieger;Heiko B. Weber
DOI：
10.3390/nano11010072
发表时间：
2020-12-31
期刊：
Nanomaterials (Basel, Switzerland)
影响因子：
--
作者：
Castelletto S;Maksimovic J;Katkus T;Ohshima T;Johnson BC;Juodkazis S
通讯作者：
Juodkazis S
钻石作为集成量子光子学的平台（Adv. Quantum Technol. 3/2018）
影响因子：
4.4
作者：
F. Lenzini;N. Gruhler;N. Walter;W. Pernice
通讯作者：
W. Pernice
影响因子：
16.6
作者：
Nagy, Roland;Niethammer, Matthias;Wrachtrup, Joerg
通讯作者：
Wrachtrup, Joerg
影响因子：
10.8
作者：
Ruehl, Maximilian;Bergmann, Lena;Weber, Heiko B.
通讯作者：
Weber, Heiko B.