Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
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通过泵浦探针反射测量表征未掺杂和 p 掺杂 InAs/GaAs 量子点的超快载流子动力学
DOI：
10.1063/1.2913316
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发表时间：
2008-04
影响因子：
3.2
通讯作者：
Lan, Sheng
中科院分区：
文献类型：
--
作者：
Liu, Song-Hao;Liu, Hai-Ying;Dai, Qiao-Feng;Meng, Zi-Ming;Wu, Li-Jun;Yang, Tao;Guo, Qi;Hu, Wei;Lan, Sheng
通过基于时域有限差分技术的数值模拟和基于介质膜理论的理论计算，研究了泵浦-探测反射测量中量子点异质结构的差分反射与结构参数的关系.结果表明，微分反射的大小和符号强烈依赖于盖层和量子点层的厚度。此外，在未掺杂和p掺杂的InAs scinGaAs量子点的载流子动力学之间的比较进行泵浦-探测反射测量。通过适当拟合差分反射光谱，提取了载流子从GaAs势垒到InAs润湿层和从InAs润湿层到InAs量子点的俘获时间。此外，载流子动力学的依赖注入载流子密度被确定。基于微分反射光谱对未掺杂和p掺杂量子点中的载流子动力学进行了详细分析.
We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs∕GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra i...
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影响因子：
4
作者：
T. Piwoński;I. O'Driscoll;J. Houlihan;G. Huyet;R. Manning;A. Uskov
通讯作者：
T. Piwoński;I. O'Driscoll;J. Houlihan;G. Huyet;R. Manning;A. Uskov
影响因子：
4
作者：
K. Gundogdu;K. Hall;T. Boggess;D. Deppe;O. Shchekin
通讯作者：
K. Gundogdu;K. Hall;T. Boggess;D. Deppe;O. Shchekin
影响因子：
4
作者：
K. Sun;A. Kechiantz;B. C. Lee;Chien-Ping Lee
通讯作者：
K. Sun;A. Kechiantz;B. C. Lee;Chien-Ping Lee
影响因子：
3.7
作者：
S. Marcinkevičius;R. Leon
通讯作者：
S. Marcinkevičius;R. Leon
DOI：
10.1016/s1386-9477(02)00513-1
发表时间：
2002-10
影响因子：
3.3
作者：
J. Lee;J. Leem;H. Lee
通讯作者：
J. Lee;J. Leem;H. Lee