Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode

Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode
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多层石墨烯电极无磷InGaN微金字塔白光发光二极管

DOI:
10.1039/c5ra11353a
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发表时间:
2015-11
期刊:
影响因子:
3.9
通讯作者:
Wang, Junxi
Wang, Junxi
中科院分区:
化学3区
文献类型:
--
作者:
Lu, Hongxi;Yi, Xiaoyan;Li, Jinmin;Wang, Junxi

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本文报道了微金字塔有源层与石墨烯电极的结合,实现了无磷InGaN基白光发光二极管(led)。利用扫描电子显微镜(SEM)和透射电子显微镜(TEM)对微金字塔阵列的结构进行了表征。根据CL和EDX分析,这两个发光峰源于MOCVD过程中铟的偏析。采用多层石墨烯简化了微金字塔阵列电连接的制造工艺。随着注入电流的增加,两个发射峰的波长位移都很小,表明QCSE较弱。此外,石墨烯连接的无磷InGaN微金字塔白光二极管阵列的反向漏电流也很低。
We reported the combination of micro-pyramid active layers and graphene electrode to realize the phosphor-free InGaN based white light emitting diodes (LEDs). SEM and TEM measurements were used to characterize the structural qualities of the micro pyramid arrays. According to CL and EDX analyses, the two emitting peaks originated from the indium segregation during the MOCVD process. Multilayer graphene was used to simplify the fabrication process for the electrical connection of the micro-pyramid arrays. The wavelength shift of two emitting peaks were both small with the increase of injection currents, indicating the weak QCSE. What was more, the reverse current leakage was also quite low for the phosphor-free InGaN micro-pyramid white light emitting diodes arrays connected by graphene.
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