Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.
Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.
复制标题
DOI：
10.1021/nl300673r
复制
发表时间：
2012-07-11
期刊：
影响因子：
10.8
通讯作者：
Gracias DH
中科院分区：
文献类型：
--
作者：
James T;Kalinin YV;Chan CC;Randhawa JS;Gaevski M;Gracias DH
人们发现具有圆锥形几何形状的纳米孔可以整流电解质中的离子电流。虽然众所周知，半导体膜中的纳米孔可以通过孔表面电荷的门控修饰来调节离子传输，但硅 (Si) 中圆锥形纳米孔的制造已被证明具有挑战性。在这里，我们报告了金 (Au) 纳米颗粒 (NP) 辅助等离子体蚀刻导致硅中形成圆锥形蚀刻轮廓的发现。这些圆锥形轮廓是由于 Au NP 附近的 Si 蚀刻速率提高而产生的。我们表明，该过程提供了一种方便且通用的方法来在硅膜和晶体中制造具有可变孔径和锥角的圆锥形纳米孔。我们研究了通过这些孔的离子传输，并观察到仅通过电压门控即可将精馏比提高 100 倍以上，并且这些孔可以充当具有约 260 的高开关比的离子开关。此外，我们证明了对蛋白质传输的电压门控控制，这在芯片实验室设备和生物分子分离中非常重要。
Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP) assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and coneangles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.
登录
查看更多内容
影响因子：
10.8
作者：
Rykaczewski, Konrad;Hildreth, Owen J.;Scott, John Henry J.
通讯作者：
Scott, John Henry J.
影响因子：
15
作者：
Ali, Mubarak;Yameen, Basit;Azzaroni, Omar
通讯作者：
Azzaroni, Omar
DOI：
10.1016/s0168-583x(01)00722-4
发表时间：
2001-11-01
影响因子：
1.3
作者：
Apel, PY;Korchev, YE;Yoshida, M
通讯作者：
Yoshida, M
影响因子：
10.8
作者：
Gracheva, Maria E.;Vidal, Julien;Leburton, Jean-Pierre
通讯作者：
Leburton, Jean-Pierre
影响因子：
15
作者：
Harrell, CC;Kohli, P;Martin, CR
通讯作者：
Martin, CR