DC and RF sputtered molybdenum electrodes for Cu(In,Ga)Se2 thin film solar cells

DC and RF sputtered molybdenum electrodes for Cu(In,Ga)Se2 thin film solar cells
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用于 Cu(In,Ga)Se-2 薄膜太阳能电池的直流和射频溅射钼电极

DOI:
10.1016/j.apsusc.2018.09.130
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发表时间:
2019-01
影响因子:
6.7
通讯作者:
Wan M.
Wan M.
中科院分区:
材料科学1区
文献类型:
--
作者:
Zhu H.;Dong Z.;Niu X.;Li J.;Shen K.;Mai Y.;Wan M.

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在这项研究中,钼(Mo)薄膜沉积在不同的工作压力和不同的靶-基片距离(Dt-s)(8 cm和10 cm)下的射频(RF)或直流(DC)电源的激励下,应用于铜(In,Ga)硒(CIGS)薄膜太阳能电池。系统地研究和比较了这些RF和DC溅射Mo薄膜的各种材料性质,包括动态沉积速率、电学和光学性质、晶体结构和形态。在CIGS薄膜太阳能电池中,采用Mo双层,即在高工作压力下制备的底部Mo层和在低工作压力下溅射的顶部Mo薄膜作为背电极。具有DC Mo/DC Mo双层的CIGS薄膜太阳能电池与具有RF Mo层的其它CIGS薄膜太阳能电池相比具有相对较高的效率,这可能与钠(Na)穿过DC Mo层并进入CIGS吸收体的相对容易的迁移有关。在本工作中获得了16.2%的高效率CIGS薄膜太阳能电池。
In this study, molybdenum (Mo) thin films are deposited at different working pressures and different target-substrate distances (Dt-s) (8 cm and 10 cm) under the excitation of the radio frequency (RF) or direct current (DC) power supply for applications in Cu(In,Ga)Se2(CIGS) thin film solar cells. The various material properties including dynamic deposition rate, electrical and optical properties, crystal structure and morphology are systematically investigated and compared for these RF and DC sputtered Mo thin films. Mo bilayer, i.e. bottom Mo layer prepared at a high working pressure and top Mo thin film sputtered at a low working pressure are employed as back electrodes in CIGS thin film solar cells. CIGS thin film solar cells with DC Mo/DC Mo bilayer have relatively higher efficiency as compared to the others with RF Mo layers, which might be related to a relatively easy migration of sodium (Na) passing through the DC Mo layers and entering into the CIGS absorbers. A high efficiency CIGS thin film solar cell of 16.2% has been achieved in this work.
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