Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.
Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.
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DOI：
10.1038/s41598-018-21864-2
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发表时间：
2018-02-23
影响因子：
4.6
通讯作者：
Kenyon AJ
中科院分区：
文献类型：
--
作者：
Ng WH;Lu Y;Liu H;Carmalt CJ;Parkin IP;Kenyon AJ
无机半导体如III-V族材料在我们的日常生活中非常重要，因为它们用于制造光电和微电子元件，其重要应用范围从能量收集到电信。在某些应用中，这些组件需要在恶劣的环境中工作。在这种情况下，防水能力是必不可少的。在这里，我们展示了设计和控制的磷化铟为基础的多层材料（InP/InGaAs/InP）的润湿性使用的快速电子束光刻技术制造的凹入结构。这种图案化技术使我们能够制造高度均匀的纳米结构阵列，与传统的电子束光刻方法相比，图案化时间缩短了至少一个数量级。我们显著降低了表面接触分数，使得水滴可以从我们的纳米结构化表面完全去除。我们通过模拟水滴与图案化表面和分配针之间的粘附能来预测图案化表面的润湿性。这对于开发无涂层的防水光电和微电子部件是非常有用的，其中涂层可能阻碍这种器件的性能并引起半导体制造兼容性的问题。
Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.
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影响因子：
35
作者：
Liu, Huiyun;Wang, Ting;Seeds, Alwyn
通讯作者：
Seeds, Alwyn
对水及其仿生材料具有高粘附力的超疏水壁虎脚
影响因子：
6.7
作者：
Liu, Kesong;Du, Jiexing;Jiang, Lei
通讯作者：
Jiang, Lei
影响因子：
2.3
作者：
Gadegaard, N;Thoms, S;Wilkinson, CDW
通讯作者：
Wilkinson, CDW
影响因子：
4
作者：
Liu, HC;Gao, M;Fafard, S
通讯作者：
Fafard, S
影响因子：
17.1
作者：
Mumm, Florian;van Helvoort, Antonius T. J.;Sikorski, Pawel
通讯作者：
Sikorski, Pawel