Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories
Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories
复制标题
隧道层对浮栅有机薄膜晶体管非易失性存储器性能的影响
DOI：
10.1063/1.4896665
复制
发表时间：
2014-09
影响因子：
4
通讯作者：
Xie W.
中科院分区：
文献类型：
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作者：
Han J.;Ying J.;Xiang L.;Xie W.
Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current...
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影响因子：
19
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
29.4
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
4
作者：
S. Ogawa;Y. Kimura;M. Niwano;H. Ishii
通讯作者：
S. Ogawa;Y. Kimura;M. Niwano;H. Ishii
影响因子：
3.2
作者：
A. Opitz;Matthias Horlet;Marc Kiwull;J. Wagner;M. Kraus;W. Brütting
通讯作者：
A. Opitz;Matthias Horlet;Marc Kiwull;J. Wagner;M. Kraus;W. Brütting
具有纳米颗粒浮栅的有机薄膜晶体管存储器
影响因子：
3.1
作者：
通讯作者：
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