Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping.
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping.
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DOI：
10.1038/s41598-018-32746-y
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发表时间：
2018-09-28
影响因子：
4.6
通讯作者：
Metzger WK
中科院分区：
文献类型：
--
作者：
McCandless BE;Buchanan WA;Thompson CP;Sriramagiri G;Lovelett RJ;Duenow J;Albin D;Jensen S;Colegrove E;Moseley J;Moutinho H;Harvey S;Al-Jassim M;Metzger WK
光伏薄膜材料，如碲化镉（CdTe）、铜铟二硒基黄铜矿（CIGS）和碘化铅基钙钛矿，为降低太阳能组件的投资成本和提高微晶硅的性能提供了潜力。然而，几十年来，理解和控制这些多晶薄膜中的空穴和电子浓度一直是极具挑战性和局限性的。组成原子之间的离子键经常导致难以控制的顽固的内在补偿缺陷化学反应。器件建模表明，在保持载流子寿命数纳秒的情况下，增加CdTe空穴密度可以将太阳能电池效率提高到25%。本文描述了原位Sb， As和P掺杂和生长后退火，将空穴密度从历史上的1014限制增加到1016-1017 cm−3水平，而不影响薄多晶CdTe薄膜的寿命，这为提高太阳能性能和实现低于传统电源的成本开辟了道路。
Thin film materials for photovoltaics such as cadmium telluride (CdTe), copper-indium diselenide-based chalcopyrites (CIGS), and lead iodide-based perovskites offer the potential of lower solar module capital costs and improved performance to microcrystalline silicon. However, for decades understanding and controlling hole and electron concentration in these polycrystalline films has been extremely challenging and limiting. Ionic bonding between constituent atoms often leads to tenacious intrinsic compensating defect chemistries that are difficult to control. Device modeling indicates that increasing CdTe hole density while retaining carrier lifetimes of several nanoseconds can increase solar cell efficiency to 25%. This paper describes in-situ Sb, As, and P doping and post-growth annealing that increases hole density from historic 1014 limits to 1016–1017 cm−3 levels without compromising lifetime in thin polycrystalline CdTe films, which opens paths to advance solar performance and achieve costs below conventional electricity sources.
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