Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control
Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control
复制标题
CoFeB界面氟化物置换对界面磁各向异性及其电压控制的影响
DOI：
10.1063/1.5006420
复制
发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
K. Kita
中科院分区：
文献类型：
--
作者：
Mykhailo Pankieiev;K. Kita
本文报道了用氟化物层代替相邻的氧化层来改善Co_（60）Fe_（20）B_（20）界面垂直磁各向异性的结果。我们预期氟作为电负性高于氧化物的元素，可以更有效地从铁磁的面外d轨道吸引电子，增加面内轨道的作用。通过这种方式，我们希望增加PMA及其对外加电压偏置的响应。极性磁光克尔效应测量表明，用氟取代氧后，使膜层磁化强度垂直于膜层所需的面外磁场减小，膜层对外加电压的响应系数α从CoFeB/Al 2 O3界面的< 10 fJ/Vm增加到CoFeB/AlF 3/Al 2 O3的20 fJ/Vm和CoFeB/MgF 2膜层的22 fJ/Vm。Co与F的直接化学相互作用通过Co2 p芯能级区域的X射线光电子能谱（XPS）测量证实。角分辨XPS分析表明，F主要停留在CoFeB界面上拉特而非CoFeB界面上。
In this paper we report results of improving Co60Fe20B20 interface perpendicular magnetic anisotropy (PMA) by replacing neighbor oxide layer with fluoride one. We expected that fluorine as element with higher than oxide electronegativity could more effectively attract electrons from out-of-plane d orbitals of ferromagnetic, increasing role of in-plane orbitals. By this we wanted to increase PMA and its response to applied voltage bias. Polar magneto-optic Kerr effect measurement show decreasing of out-of-plane magnetic field needed to change magnetization to perpendicular in stacks with oxygen replaced by fluorine as well as increasing of coefficient of response to applied voltage α from < 10 fJ/Vm for CoFeB/Al2O3 interface to 20 fJ/Vm for CoFeB/AlF3/Al2O3 and 22 fJ/Vm for CoFeB/MgF2 stacks. Direct chemical interaction of Co with F was confirmed by x-ray photoelectron spectroscopy (XPS) measurement of Co2p core level region. Moreover angular-resolved XPS showed that F tends to stay at CoFeB interface rath...
影响因子：
4
作者：
Nozaki, T.;Shiota, Y.;Suzuki, Y.
通讯作者：
Suzuki, Y.
影响因子：
38.3
作者：
Maruyama, T.;Shiota, Y.;Suzuki, Y.
通讯作者：
Suzuki, Y.
影响因子：
16.6
作者：
Miwa S;Suzuki M;Tsujikawa M;Matsuda K;Nozaki T;Tanaka K;Tsukahara T;Nawaoka K;Goto M;Kotani Y;Ohkubo T;Bonell F;Tamura E;Hono K;Nakamura T;Shirai M;Yuasa S;Suzuki Y
通讯作者：
Suzuki Y