Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering
Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering
复制标题
通过界面工程提高全无机量子点发光二极管的效率
DOI：
10.3389/fchem.2020.00265
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发表时间：
2020-04
影响因子：
5.5
通讯作者：
Zuliang Du
中科院分区：
文献类型：
--
作者：
Qiulei Xu;Xinyu Li;Qingli Lin;Huaibin Shen;Hongzhe Wang;Zuliang Du
作为量子点（QD）发光二极管（QLED）的电荷传输层，与有机材料相比，金属氧化物有望具有更高的稳定性。然而，基于金属氧化物的全无机QLED的效率仍然远远落后于有机（材料相关的器件效率，此处原句不完整）。
As the charge transport layer of quantum dot (QD) light-emitting diodes (QLEDs), metal oxides are expected to be more stable compared with organic materials. However, the efficiency of metal oxide-based all-inorganic QLEDs is still far behind that of organic–inorganic hybrid ones. The main reason is the strong interaction between metal oxide and QDs leading to the emission quenching of QDs. Here, we demonstrated nickel oxide (NiOx)-based all-inorganic QLEDs with a maximum current efficiency of 20.4 cd A−1 and external quantum efficiency (EQE) of 5.5%, which is among the most efficient all-inorganic QLEDs. The high efficiency is mainly attributed to the aluminum oxide (Al2O3) deposited at the NiOx/QDs interface to suppress the strong quenching effect of NiOx on the QD emission, together with the molybdenum oxide (MoOx) that reduced the leakage current and facilitated hole injection, more than 300% enhancement was achieved compared with the pristine NiOx-based QLEDs. Our study confirmed the effect of decorating the NiOx/QDs interface on the performance enhancement of the all-inorganic QLEDs.
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影响因子：
6.4
作者：
Zhang, Heng;Wang, Siting;Chen, Shuming
通讯作者：
Chen, Shuming
影响因子：
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Xiangyang Wu;E. K. Yeow
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Xiangyang Wu;E. K. Yeow
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通讯作者：
Sun, Xiao Wei
影响因子：
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通讯作者：
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2.6
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通讯作者：
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