Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.
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DOI:
10.1038/s41598-017-16949-3
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发表时间:
2017-11-30
期刊:
影响因子:
4.6
通讯作者:
Ovchinnikova OS
Ovchinnikova OS
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Belianinov A;Burch MJ;Hysmith HE;Ievlev AV;Iberi V;Susner MA;McGuire MA;Maksymovych P;Chyasnavichyus M;Jesse S;Ovchinnikova OS

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与2D材料对接的多材料系统,或全新的3D异质结构,都可能导致下一代多功能器件架构。随着功能结构接近物理极限,纳米级的物理和化学控制也是必要的。二维过渡金属硫代磷酸盐(TPS),通式为Cu1−xIn1+x/3P2S6,在室温以上表现出铁电极化行为,使其在化学和物理性质上都具有很大的吸引力。我们以前的研究表明,铁性有序存在于表面,并且在非化学计量比的铜/铟比配方中,铁电相和顺电相的螺旋状分解发生。在这里,我们讨论氦离子辐照引起的化学变化。我们利用氦离子显微镜、原子力显微镜(AFM)和飞行时间-二次离子质谱仪(ToF-SIMS)探索了不同铜/铟比的TPS化合物文库。我们将物理纳米和微观结构与氦离子剂量以及铜、氧和硫的化学特征相关联。我们的ToF-SIMS结果表明,He离子辐照导致氧渗透到辐照区域,并沿富铜磁区扩散到氦离子的停止距离。
Multi-material systems interfaced with 2D materials, or entirely new 3D heterostructures can lead to the next generation multi-functional device architectures. Physical and chemical control at the nanoscale is also necessary tailor these materials as functional structures approach physical limit. 2D transition metal thiophosphates (TPS), with a general formulae Cu1−xIn1+x/3P2S6, have shown ferroelectric polarization behavior with a T c above the room temperature, making them attractive candidates for designing both: chemical and physical properties. Our previous studies have demonstrated that ferroic order persists on the surface, and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we discuss the chemical changes induced by helium ion irradiation. We explore the TPS compound library with varying Cu/In ratio, using Helium Ion Microscopy, Atomic Force Microscopy (AFM), and Time of Flight-Secondary Ion Mass Spectrometry (ToF-SIMS). We correlate physical nano- and micro- structures to the helium ion dose, as well as chemical signatures of copper, oxygen and sulfur. Our ToF-SIMS results show that He ion irradiation leads to oxygen penetration into the irradiated areas, and diffuses along the Cu-rich domains to the extent of the stopping distance of the helium ions.
二维半导体中的缺陷激活光致发光:束缚激子、带电激子和自由激子之间的相互作用
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