Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.
Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.
复制标题
DOI:
10.1038/s41598-017-16949-3
复制
发表时间:
2017-11-30
影响因子:
4.6
通讯作者:
Ovchinnikova OS
中科院分区:
文献类型:
--
作者:
Belianinov A;Burch MJ;Hysmith HE;Ievlev AV;Iberi V;Susner MA;McGuire MA;Maksymovych P;Chyasnavichyus M;Jesse S;Ovchinnikova OS
Multi-material systems interfaced with 2D materials, or entirely new 3D heterostructures can lead to the next generation multi-functional device architectures. Physical and chemical control at the nanoscale is also necessary tailor these materials as functional structures approach physical limit. 2D transition metal thiophosphates (TPS), with a general formulae Cu1−xIn1+x/3P2S6, have shown ferroelectric polarization behavior with a T c above the room temperature, making them attractive candidates for designing both: chemical and physical properties. Our previous studies have demonstrated that ferroic order persists on the surface, and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we discuss the chemical changes induced by helium ion irradiation. We explore the TPS compound library with varying Cu/In ratio, using Helium Ion Microscopy, Atomic Force Microscopy (AFM), and Time of Flight-Secondary Ion Mass Spectrometry (ToF-SIMS). We correlate physical nano- and micro- structures to the helium ion dose, as well as chemical signatures of copper, oxygen and sulfur. Our ToF-SIMS results show that He ion irradiation leads to oxygen penetration into the irradiated areas, and diffuses along the Cu-rich domains to the extent of the stopping distance of the helium ions.
登录
查看更多内容
影响因子:
4.6
作者:
Tongay, Sefaattin;Suh, Joonki;Ataca, Can;Fan, Wen;Luce, Alexander;Kang, Jeong Seuk;Liu, Jonathan;Ko, Changhyun;Raghunathanan, Rajamani;Zhou, Jian;Ogletree, Frank;Li, Jingbo;Grossman, Jeffrey C.;Wu, Junqiao
通讯作者:
Wu, Junqiao
影响因子:
2.2
作者:
Ramachandra, Ranjan;Griffin, Brendan;Joy, David
通讯作者:
Joy, David
影响因子:
10.8
作者:
Belianinov, A.;He, Q.;Kalinin, S. V.
通讯作者:
Kalinin, S. V.
影响因子:
1.6
作者:
Horcas, I.;Fernandez, R.;Baro, A. M.
通讯作者:
Baro, A. M.
影响因子:
4
作者:
Schnez, S.;Molitor, F.;Ensslin, K.
通讯作者:
Ensslin, K.