Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons.
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons.
复制标题
二维半导体中的缺陷激活光致发光：束缚激子、带电激子和自由激子之间的相互作用
DOI：
10.1038/srep02657
复制
发表时间：
2013
影响因子：
4.6
通讯作者：
Wu, Junqiao
中科院分区：
文献类型：
--
作者：
Tongay, Sefaattin;Suh, Joonki;Ataca, Can;Fan, Wen;Luce, Alexander;Kang, Jeong Seuk;Liu, Jonathan;Ko, Changhyun;Raghunathanan, Rajamani;Zhou, Jian;Ogletree, Frank;Li, Jingbo;Grossman, Jeffrey C.;Wu, Junqiao
半导体中的点缺陷可以捕获自由载流子并使激子局域化。这些缺陷与载流子之间的相互作用在降维时变得更强，并有望极大地影响宿主材料的物理性质。我们研究了由α粒子辐照或热退火控制空位密度的二维(2D)半导体单层过渡金属二卤化物中阴离子空位的影响。我们发现了一个新的亚带隙发射峰，同时由于空位的产生，总的光致发光强度也增加了。有趣的是，当在真空中测量时，这些影响是不存在的。我们的结论是，与传统的看法相反，室温下的光学质量不能作为评估2D半导体晶体质量的标准。我们的结果不仅揭示了二维半导体的缺陷和激子物理，而且为利用缺陷工程来定制二维半导体的光学性质提供了一条新的途径。
Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering.
登录
查看更多内容
影响因子：
3
作者：
Grimme, Stefan
通讯作者：
Grimme, Stefan
影响因子：
3.7
作者：
SCHMIDT, T;LISCHKA, K;ZULEHNER, W
通讯作者：
ZULEHNER, W
影响因子：
4.6
作者：
Yu Y;Li C;Liu Y;Su L;Zhang Y;Cao L
通讯作者：
Cao L
影响因子：
3.5
作者：
Benameur, M. M.;Radisavljevic, B.;Kis, A.
通讯作者：
Kis, A.
影响因子：
17.1
作者：
Lee, Changgu;Yan, Hugen;Ryu, Sunmin
通讯作者：
Ryu, Sunmin