Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3 film
Above 1% efficiency of a ferroelectric solar cell based on the Pb(Zr,Ti)O3 film
复制标题
以上%201%%20效率%20of%20a%20铁电%20solar%20cell%20based%20on%20the%20Pb(Zr,Ti)O3%20film
DOI：
10.1039/c3ta13724d
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发表时间：
2014
影响因子：
--
通讯作者：
Hao, Jianhua
中科院分区：
文献类型：
--
作者：
zheng,fg;Y. Xin;huang,w;J. X. Zhang;Hao, Jianhua
在In 2 O3：Sn（ITO）玻璃上制备了带隙为3.6 eV的Pb（Zr，Ti）O3（PZT）薄膜，然后在PZT/ITO/玻璃上沉积了带隙为1.8 eV的非晶硅（a-Si）薄膜。Ag/a-Si/PZT/ITO/glass样品的短路电流为2.56 mA cm-2，约为Pt/PZT/ITO/glass样品的50倍。a-Si薄膜的能级与PZT薄膜的能级匹配良好，有利于紫外-可见光诱导电荷在Ag/a-Si/PZT/ITO/glass样品中的输运。光伏输出可以通过改变a-Si膜的掺杂类型来调节，并且在具有n型a-Si膜（磷掺杂）的PZT膜中测得最大光电转换效率高达1.25%。
Pb(Zr,Ti)O3 (PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm−2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).
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DOI：
10.1049/ep.1970.0039
发表时间：
1970
期刊：
Electronics and Power
影响因子：
--
作者：
G. Pridham
通讯作者：
G. Pridham
影响因子：
3.2
作者：
C. Won;Y. A. Park;Kyungdong Lee;H. Ryu;N. Hur
通讯作者：
C. Won;Y. A. Park;Kyungdong Lee;H. Ryu;N. Hur
影响因子：
29.4
作者：
Xiaoluan Yang;X. Su;M. Shen;F. Zheng;Y. Xin;Lu Zhang;Muchuan Hua;Yajie Chen;Vincent G. Harris-Vincent-G.
通讯作者：
Xiaoluan Yang;X. Su;M. Shen;F. Zheng;Y. Xin;Lu Zhang;Muchuan Hua;Yajie Chen;Vincent G. Harris-Vincent-G.
影响因子：
--
作者：
Dawei Cao;Chunyan Wang;F. Zheng;Liang Fang;Wen Dong;M. Shen
通讯作者：
Dawei Cao;Chunyan Wang;F. Zheng;Liang Fang;Wen Dong;M. Shen
影响因子：
4
作者：
Dawei Cao;Jie Xu;Liang Fang;Wen Dong;F. Zheng;M. Shen
通讯作者：
Dawei Cao;Jie Xu;Liang Fang;Wen Dong;F. Zheng;M. Shen