Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures
Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures
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具有 Janus MoSSe/石墨烯异质结构的双极陡坡纳米晶体管
DOI:
10.1088/1361-6528/ac96f5
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发表时间:
2022-10
期刊:
影响因子:
3.5
通讯作者:
Paul K. Chu
中科院分区:
文献类型:
--
作者:
Xinjiang Zhang;Anping Huang;Zhisong Xiao;Mei Wang;Jing Zhang;Paul K. Chu
The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling
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