Monolithic integration of embedded III-V lasers on SOI.
Monolithic integration of embedded III-V lasers on SOI.
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DOI：
10.1038/s41377-023-01128-z
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发表时间：
2023-04-03
影响因子：
19.4
通讯作者：
Wang, Ting
中科院分区：
文献类型：
--
作者：
Wei, Wen-Qi;He, An;Yang, Bo;Wang, Zi-Hao;Huang, Jing-Zhi;Han, Dong;Ming, Ming;Guo, Xuhan;Su, Yikai;Zhang, Jian-Jun;Wang, Ting
硅光子集成由于其优良的光学器件特性和互补金属氧化物半导体（CMOS）兼容性，在许多应用领域取得了巨大的成功。在单个硅晶片上实现III-V族激光器和硅光子组件的单片集成被认为是超密集光子集成的长期障碍，超密集光子集成可以提供相当经济、节能和可在制造厂扩展的片上光源，这尚未被报道。在这里，我们展示了嵌入式InAs/GaAs量子点（QD）激光器直接生长在沟槽绝缘体上硅（SOI）衬底，实现单片集成对接耦合硅波导。利用SOI沟槽内的光栅结构和混合分子束外延（MBE）的独特外延方法，在这种模板上实现了高性能的嵌入式InAs量子点激光器。通过解决这种单片集成架构中的外延和制造挑战，获得了SOI上的嵌入式III-V族激光器，其连续波激射高达85 °C。从对接耦合硅波导的末端可以测量到6.8 mW的最大输出功率，估计耦合效率约为-6.7 dB。本文提出的结果提供了一种可扩展的低成本外延方法，用于实现直接耦合到硅光子器件的片上光源，用于未来的高密度光子集成。
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.
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