Realization of GaN-based gain-guided blue laser diodes by helium ion implantation
Realization of GaN-based gain-guided blue laser diodes by helium ion implantation
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氦离子注入实现GaN基增益引导蓝色激光二极管
DOI：
10.1088/1361-6641/ab429c
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发表时间：
2019-10
影响因子：
1.9
通讯作者：
Hui Yang
中科院分区：
文献类型：
--
作者：
Qi Zhang;Shuming Zhang;Feng Zhang;Junjie Hu;Meixin Feng;Masao Ikeda;Deyao Li;Jianping Liu;Weiguang Yang;Liqun Zhang;Hui Yang
研究了采用离子注入技术限制载流子注入到有源区的氮化镓（GaN）基增益引导蓝光激光二极管（LD）的制作工艺和特性。实验中进行了能量为85 keV、角度为0°、剂量为4.7 × 1014 cm−2的氦离子注入。注入样品的p型欧姆接触比接触电阻率为2.2 × 10-4 Ω cm ~ 2，与未注入样品相当。然后，离子注入增益引导和脊形波导LD的制作在同一时间。获得了类似的阈值电流密度和斜率效率，而离子注入增益引导LD的操作电压在0.56 kA cm-2时比脊波导LD低0.2 V。脊形波导LD在发射激光后表现出多模操作。然而，对于离子注入增益引导LD，远场图案指示高达阈值电流的两倍的单横向模式操作，并且在脉冲条件下，蓝光单模LD在450 nm处的峰值光输出功率超过200 mW。
The fabrication process and characteristics of gallium nitride (GaN) based gain-guided blue laser diodes (LDs) are studied, in which an ion implantation process is adopted to confine carrier injection into the active region. The implantation of helium ions with an energy of 85 keV, an angle of 0°, and a dosage of 4.7 × 1014 cm−2 is conducted in the experiment. The specific contact resistivity of p-type ohmic contact of implanted sample is determined to be 2.2 × 10–4 Ω cm2, which is comparable with the un-implanted sample. Then, both ion-implanted gain-guided and ridge waveguide LDs are fabricated at the same time. Similar threshold current density and slope efficiency are obtained, while the operation voltage of ion-implanted gain-guided LDs is 0.2 V lower than the ridge waveguide LDs at 0.56 kA cm−2. The ridge waveguide LDs show multi-mode operation after lasing. However, for ion-implanted gain-guided LDs, the far-field pattern indicates a single lateral mode operation up to twice of the threshold current, and the peak optical output power of blue single mode LDs at 450 nm exceeds 200 mW under pulsed condition.
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影响因子：
2.5
作者：
T. Asano;T. Tojyo;T. Mizuno;M. Takeya;S. Ikeda;K. Shibuya;T. Hino;S. Uchida;M. Ikeda
通讯作者：
T. Asano;T. Tojyo;T. Mizuno;M. Takeya;S. Ikeda;K. Shibuya;T. Hino;S. Uchida;M. Ikeda
深部缺陷对轻掺杂GaN电性能的补偿作用
影响因子：
6.2
作者：
Liu S T;Yang J;Zhao D G;Jiang D S;Liang F;Chen P;Zhu J J;Liu Z S;Liu W;Xing Y;Zhang L Q;Li M
通讯作者：
Li M
影响因子：
3.2
作者：
D. I. Florescu;F. Pollak;W. Lanford;F. Khan;I. Adesida;R. Molnar
通讯作者：
D. I. Florescu;F. Pollak;W. Lanford;F. Khan;I. Adesida;R. Molnar
DOI：
10.1007/s00340-017-6783-y
发表时间：
2017-07
期刊：
Applied Physics B
影响因子：
--
作者：
C. Jia;Song Li;Xiaomin Song
通讯作者：
C. Jia;Song Li;Xiaomin Song
影响因子：
3.1
作者：
A. Colder;P. Marie;T. Wojtowicz;P. Ruterana;S. Eimer;L. Méchin;K. Lorenz;U. Wahl;E. Alves;V. Matias;M. Mamor
通讯作者：
A. Colder;P. Marie;T. Wojtowicz;P. Ruterana;S. Eimer;L. Méchin;K. Lorenz;U. Wahl;E. Alves;V. Matias;M. Mamor