Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si(111)
Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si(111)
复制标题
加热聚苯乙烯/Si(111)制备碳化硅薄膜的生长动力学
DOI：
10.1088/1674-0068/22/01/102-106
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发表时间：
2009-02
影响因子：
1
通讯作者：
Yu-xia Wang
中科院分区：
文献类型：
--
作者：
Zheng Chen;You-ming Zou;Jian-wen Wang;Yu-xia Wang
在不同温度下，在常压Ar气氛中加热聚苯乙烯/Si(111)制备了碳化硅薄膜。用X射线衍射仪、扫描电子显微镜、X射线光电子能谱和傅立叶红外吸收光谱对薄膜进行了表征。利用FTIR光谱计算了碳化硅薄膜的厚度。研究了碳化硅薄膜生长过程中的生长动力学。随着生长温度的升高，生长1h的碳化硅薄膜的厚度在三个温度范围内呈现不同的趋势：缓慢增加(1200-1250℃)、快速增加(1250-1270℃)和减小(1270-1300℃)。计算出三个温度范围内碳化硅薄膜生长过程的表观活化能分别为122.5、522.5和127.5 J/−。讨论了不同生长过程的机理。薄膜厚度与生长温度的关系表明，薄膜的生长过程在第一范围内为2D机制，在第二范围内为3D机制。在第三个范围内，Si和C原子的挥发度降低了碳化硅薄膜的厚度。
SiC films were prepared by heating polystyrene/Si(111) in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges: increasing slowly (1200–1250 °C), increasing quickly (1250–1270 °C), and decreasing (1270–1300 °C). The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5, 522.5, and −127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.
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DOI：
10.1116/1.577880
发表时间：
1992-07
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
C. Lavoie;S. Johnson;J. Mackenzie;T. Tiedje;T. Buuren
通讯作者：
C. Lavoie;S. Johnson;J. Mackenzie;T. Tiedje;T. Buuren
影响因子：
3.9
作者：
S. Nishino;Y. Hazuki;H. Matsunami;Tetsuro Tanaka
通讯作者：
S. Nishino;Y. Hazuki;H. Matsunami;Tetsuro Tanaka
影响因子：
1.7
作者：
P. Das;D. Ferry
通讯作者：
P. Das;D. Ferry
影响因子：
4
作者：
S. Kerdilès;A. Berthelot;F. Gourbilleau;R. Rizk
通讯作者：
S. Kerdilès;A. Berthelot;F. Gourbilleau;R. Rizk
影响因子：
3.2
作者：
Beifang Yang;W. Cai;Ping-sheng He;Yongning Sheng;Bang-kun Jin;Y. Ruan;Keliang Hu;Yunlan Huang;Gui-en Zhou
通讯作者：
Beifang Yang;W. Cai;Ping-sheng He;Yongning Sheng;Bang-kun Jin;Y. Ruan;Keliang Hu;Yunlan Huang;Gui-en Zhou