Discrete relaxation method for hybrid e-beam and triple patterning lithography layout decomposition

Discrete relaxation method for hybrid e-beam and triple patterning lithography layout decomposition
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混合电子束和三重图案光刻布局分解的离散松弛方法

DOI:
10.1007/s12652-021-02939-x
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发表时间:
2021-02
影响因子:
--
通讯作者:
Yeh-Cheng Chen
Yeh-Cheng Chen
中科院分区:
计算机科学3区
文献类型:
--
作者:
Xingquan Li;Jiangkao Li;Hongxi Wu;Yeh-Cheng Chen

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混合电子束光刻(EBL)和三次图案化光刻(TPL)是一种先进的集成电路制造技术。为了解决EBL和第三方物流的混合布局分解问题,提出了一种离散松弛算法。已有的工作致力于从理论上评价所获得的结果的质量。我们的离散松弛是第一种可以用来评价解质量的方法。首先,我们介绍了一个扩展的最小重量支配集染色问题(EMDSC)。我们证明了EMDSC问题是HETLD问题的离散松弛,该问题用整数线性规划(ILP)方法求解。其次,通过插入缝线和分配EBL,将松弛解合法化为初始问题的可行解。实验结果表明,该方法获得了接近最优解。
Hybrid electron beam lithography (EBL) and triple patterning lithography (TPL) is an advanced technology for IC manufacture. To solve the hybrid EBL and TPL layout decomposition problem (HETLD), we propose a discrete relaxation method in this paper. Existed works hard to evaluate the quality of the obtained results theoretically. Our discrete relaxation is the first approach which can be used to evaluate the solution quality. First, we introduce an extended minimum weight dominating set coloring problem (EMDSC). We show that the EMDSC problem is a discrete relaxation of the HETLD problem, which is solved by an integer linear programming (ILP) approach. Second, we legalize the relaxation solution to a feasible solution of the initial problem by inserting stitches and assigning EBLs. Experimental results show that our method achieves the near-optimal solution.
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发表时间: 2014-02
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