Solid state gas sensor research in Germany - a status report.
Solid state gas sensor research in Germany - a status report.
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DOI：
10.3390/s90604323
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Weimar U
中科院分区：
文献类型：
--
作者：
Moos R;Sahner K;Fleischer M;Guth U;Barsan N;Weimar U
本报告概述了德国气体传感器研究界的活动。重点介绍了电位法、电流法、电导法、阻抗法和场效应气体传感器的最新进展。结果表明，除了逐步改进传统的原则，例如通过应用新材料，新的原则，使新的市场。在混合电位气体传感器领域，新型材料允许选择性地检测燃烧废气成分。通过将沸石用于阻抗气体传感器可以达到相同的目标。操作光谱学是了解n型和p型电导传感器中的机制以及设计基于知识的改进传感器器件的有力工具。新的沉积方法被应用于获得直接访问的材料形态，以及获得致密的厚金属氧化物膜，而无需高温步骤。由于电导和阻抗传感器具有电流必须通过气体敏感膜的缺点，因此膜形态、电极材料和几何问题影响传感器信号。因此，人们试图直接测量费米能级的位置，无论是在高温下测量的气体依赖的塞贝克系数或在室温下通过应用一种改进的小型化开尔文探针方法，其中表面吸附为基础的功函数的变化驱动的漏源电流的场效应晶体管。
This status report overviews activities of the German gas sensor research community. It highlights recent progress in the field of potentiometric, amperometric, conductometric, impedimetric, and field effect-based gas sensors. It is shown that besides step-by-step improvements of conventional principles, e.g. by the application of novel materials, novel principles turned out to enable new markets. In the field of mixed potential gas sensors, novel materials allow for selective detection of combustion exhaust components. The same goal can be reached by using zeolites for impedimetric gas sensors. Operando spectroscopy is a powerful tool to learn about the mechanisms in n-type and in p-type conductometric sensors and to design knowledge-based improved sensor devices. Novel deposition methods are applied to gain direct access to the material morphology as well as to obtain dense thick metal oxide films without high temperature steps. Since conductometric and impedimetric sensors have the disadvantage that a current has to pass the gas sensitive film, film morphology, electrode materials, and geometrical issues affect the sensor signal. Therefore, one tries to measure directly the Fermi level position either by measuring the gas-dependent Seebeck coefficient at high temperatures or at room temperature by applying a modified miniaturized Kelvin probe method, where surface adsorption-based work function changes drive the drain-source current of a field effect transistor.
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影响因子：
8.4
作者：
Fleischer, M;Simon, E;Meixner, H
通讯作者：
Meixner, H
影响因子：
8.4
作者：
Eisele, I;Doll, T;Burgmair, M
通讯作者：
Burgmair, M
DOI：
10.1111/j.1151-2916.1988.tb05848.x
发表时间：
1988-04-01
影响因子：
3.9
作者：
CHOI, GM;TULLER, HL
通讯作者：
TULLER, HL
影响因子：
2.1
作者：
Emiroglu, S;Bârsan, N;Hoffmann, V
通讯作者：
Hoffmann, V
影响因子：
3.9
作者：
Achmann, Sabine;Haemmerle, Martin;Moos, Ralf
通讯作者：
Moos, Ralf