All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide.
All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide.
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DOI：
10.1038/s41467-021-21332-y
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发表时间：
2021-02-15
影响因子：
16.6
通讯作者：
Hendry E
中科院分区：
文献类型：
--
作者：
Bohn J;Luk TS;Tollerton C;Hutchings SW;Brener I;Horsley S;Barnes WL;Hendry E
非线性光学器件及其在现代纳米光子架构中的实现受到其通常适度的非线性响应的限制。最近，ε近零（ENZ）材料已被发现具有很强的光学非线性，这可以通过使用腔或纳米结构来增强。在这里，我们研究了在ENZ区域的等离子体共振的泵浦依赖特性的铟锡氧化物（ITO）薄层。激发此模式使用的Kretschmann-Raether配置，我们研究了反射开关特性的60 nm层接近的共振等离子体激元频率。我们证明了一个热开关机制，这导致在20太赫兹的等离子体共振频率为70 GW cm-2的TM泵强度的移位。对于简并泵浦和探测频率，我们强调了一个额外的双光束耦合的贡献，以前没有隔离在ENZ非线性光学研究，这导致了整体泵浦引起的反射变化从1%到45%。全光开关是集成光子学和通信器件的重要组成部分。在这里，作者展示了全光开关的ε近零等离子体共振使用铟锡氧化物薄膜。
Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60 nm layer close to the resonant plasmon frequency. We demonstrate a thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20 THz for a TM pump intensity of 70 GW cm−2. For degenerate pump and probe frequencies, we highlight an additional two-beam coupling contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%. All-optical switching is important for integrated-photonics and communication devices. Here the authors demonstrate all-optical switching of an Epsilon-Near-Zero plasmon resonance using indium tin oxide thin film.
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