Analysis of the full stress tensor in a micropillar: Ability of and difficulties arising during synchrotron based μLaue diffraction
Analysis of the full stress tensor in a micropillar: Ability of and difficulties arising during synchrotron based μLaue diffraction
复制标题
微柱中的全应力张量分析：基于同步加速器的劳厄衍射的能力和困难
DOI：
10.1016/j.matdes.2016.06.098
复制
发表时间：
2016
影响因子：
8.4
通讯作者：
Davydok
中科院分区：
文献类型：
--
作者：
Davydok
用X射线微衍射劳厄法测量了2 · 2 · 6 μ m3锗微柱在原位加载过程中的全应变张量。初始取向梯度，残余应变和衍射峰条纹被发现可以忽略不计。由劳厄谱分析得到的应变值被用来计算偏应力张量。收集的图案显示柱旋转和平行于平冲头的接触表面作用的剪切应力分量的积累，这两者都是加载期间样品和配对主体未对准的指示。基于无应力柱侧面的假设，进一步计算了全应力张量。由劳厄图导出的加载方向上的应力与由测力传感器连续记录的信号计算的工程应力的一致性在9%以内。这种差异是由支柱相对于反主体的初始实验错位解释的。最后，在这样的原位实验过程中出现的困难进行了讨论。
The full strain tensor present in a 2 · 2 · 6 μm3sized germanium micro pillar was measured by X-ray microdiffraction Laue during in situ loading. Initial orientation gradients, residual strains and diffraction peak streaking were found negligible. The obtained strain values from Laue pattern analysis have been used to calculate the deviatoric stress tensor. The collected patterns show a pillar rotation and a build-up of shear stress components acting parallel to the contact surface of the flat punch, which is both an indication for misalignment of the sample and counter-body during loading. Based on the assumption of stress free pillar-side faces the full stress tensor was further evaluated. The stresses acting in loading direction derived from the Laue patterns compared to engineering stresses calculated from the continuously recorded signal of the load cell are in agreement within 9%. The discrepancy is explained by the initial experimental misalignment of the pillar with respect to the counter-body. Finally, difficulties arising during such an in situ experiment are discussed.
登录
查看更多内容
通过微 X 射线衍射绘制残余应力图：在薄膜屈曲研究中的应用
DOI：
10.1051/jp4:20020249
发表时间：
2002
期刊：
Journal De Physique Iv
影响因子：
--
作者：
P. Goudeau;P. Villain;N. Tamura;R. Celestre;H. Padmore
通讯作者：
H. Padmore
影响因子：
9.4
作者：
I. Tiba;T. Richeton;C. Motz;H. Vehoff;S. Berbenni
通讯作者：
I. Tiba;T. Richeton;C. Motz;H. Vehoff;S. Berbenni
影响因子：
4.6
作者：
Chamard V;Allain M;Godard P;Talneau A;Patriarche G;Burghammer M
通讯作者：
Burghammer M
基于科塞尔微衍射的扫描电子显微镜应变分辨率
影响因子：
6.1
作者：
D. Bouscaud;A. Morawiec;R. Pesci;S. Berveiller;E. Patoor
通讯作者：
E. Patoor
微米级的预期和意外塑性行为：原位 μLaue 拉伸研究
影响因子：
9.4
作者：
C. Kirchlechner;P. Imrich;W. Grosinger;M. Kapp;J. Keckes;J. Micha;O. Ulrich;O. Thomas;S. Labat;C. Motz;G. Dehm
通讯作者：
G. Dehm